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1. WO2014109343 - EVALUATION METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, QUALITY CONTROL METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, AND EVALUATION ELEMENT AND EVALUATION DEVICE USED IN SAID EVALUATION METHOD

Publication Number WO/2014/109343
Publication Date 17.07.2014
International Application No. PCT/JP2014/050177
International Filing Date 09.01.2014
IPC
G01N 22/00 2006.1
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
22Investigating or analysing materials by the use of microwaves
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
G01R 31/2608
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
2607Circuits therefor
2608for testing bipolar transistors
G01R 31/2621
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
2607Circuits therefor
2621for testing field effect transistors, i.e. FET's
G01R 31/2642
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
2642Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
G01R 31/2656
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
2656using non-ionising electromagnetic radiation, e.g. optical radiation
G01R 31/2894
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
2851Testing of integrated circuits [IC]
2894Aspects of quality control [QC]
G01R 31/308
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
308using non-ionising electromagnetic radiation, e.g. optical radiation
Applicants
  • 株式会社神戸製鋼所 KABUSHIKI KAISHA KOBE SEIKO SHO(KOBE STEEL, LTD.) [JP]/[JP]
Inventors
  • 岸 智弥 KISHI, Tomoya
  • 林 和志 HAYASHI, Kazushi
  • 釘宮 敏洋 KUGIMIYA, Toshihiro
Agents
  • 植木 久一 UEKI, Kyuichi
Priority Data
2013-00406111.01.2013JP
2013-06519326.03.2013JP
2013-25062703.12.2013JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) EVALUATION METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, QUALITY CONTROL METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, AND EVALUATION ELEMENT AND EVALUATION DEVICE USED IN SAID EVALUATION METHOD
(FR) PROCÉDÉ D'ÉVALUATION POUR UN FILM MINCE SEMI-CONDUCTEUR D'OXYDE, PROCÉDÉ DE CONTRÔLE DE LA QUALITÉ POUR UN FILM MINCE SEMI-CONDUCTEUR D'OXYDE, ET ÉLÉMENT D'ÉVALUATION ET DISPOSITIF D'ÉVALUATION UTILISÉS DANS LEDIT PROCÉDÉ D'ÉVALUATION
(JA) 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法、並びに上記評価方法に用いられる評価素子及び評価装置
Abstract
(EN) Provided are: a method for measuring and evaluating (predicting or estimating) the stress resistance of an oxide semiconductor thin film in a contactless manner accurately and easily; and a quality control method for an oxide semiconductor. This evaluation method for an oxide semiconductor thin film comprises a first step and a second step. The first step includes: subjecting a specimen on which an oxide semiconductor thin film has been formed to irradiation with both exciting light and microwave radiation; stopping the irradiation with the exciting light after the maximum intensity of the reflected wave of the microwave radiation from the oxide semiconductor thin film has been observed, the intensity of the reflected wave varying with the irradiation with the exciting light; and thereafter measuring a variation in the reflectance with which the microwave radiation is reflected by the oxide semiconductor thin film after the stopping. The second step includes: calculating, from the variation in the reflectance, a parameter that corresponds to slow attenuation found about 1μs after the stopping; and thus evaluating the stress resistance of the oxide semiconductor thin film.
(FR) L'invention concerne : un procédé pour mesurer et évaluer (prédire ou estimer) la résistance à la contrainte d'un film mince semi-conducteur d'oxyde d'une manière sans contact de façon précise et facile ; un procédé de contrôle de la qualité pour un semi-conducteur d'oxyde. Ce procédé d'évaluation pour un film mince semi-conducteur d'oxyde comprend une première étape et une seconde étape. La première étape comprend : la soumission d'un échantillon sur lequel un film mince semi-conducteur d'oxyde a été formé à une irradiation à la fois par une lumière d'excitation et un rayonnement micro-ondes ; l'arrêt de l'irradiation par la lumière d'excitation après que l'intensité maximale de l'onde réfléchie du rayonnement micro-ondes provenant du film mince semi-conducteur d'oxyde a été observé, l'intensité de l'onde réfléchie variant avec l'irradiation par la lumière d'excitation ; puis la mesure d'une variation de la réflectance avec laquelle le rayonnement micro-ondes est réfléchi par le film mince semi-conducteur d'oxyde après l'arrêt. La seconde étape comprend : le calcul, à partir de la variation de la réflectance, d'un paramètre qui correspond à une atténuation lente trouvée environ 1 μs après l'arrêt ; puis l'évaluation de la résistance à la contrainte du film mince semi-conducteur d'oxyde.
(JA)  酸化物半導体薄膜のストレス耐性を、非接触型で、正確且つ簡便に測定し、評価(予測・推定)する方法、及び酸化物半導体の品質管理方法を提供する。本発明に係る酸化物半導体薄膜の評価方法は、酸化物半導体薄膜が形成された試料に励起光及びマイクロ波を照射し、前記励起光の照射により変化する前記マイクロ波の前記酸化物半導体薄膜からの反射波の最大値を測定した後、前記励起光の照射を停止し、前記励起光の照射停止後の前記マイクロ波の前記酸化物半導体薄膜からの反射波の反射率の変化を測定する第1の工程と、前記反射率の変化から、励起光の照射停止後1μs程度に見られる遅い減衰に対応するパラメータを算出し、前記酸化物半導体薄膜のストレス耐性を評価する第2の工程と、を含む。
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