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1. WO2014103955 - POWER MODULE

Publication Number WO/2014/103955
Publication Date 03.07.2014
International Application No. PCT/JP2013/084329
International Filing Date 20.12.2013
IPC
H01L 21/52 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52Mounting semiconductor bodies in containers
B23K 35/26 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
24Selection of soldering or welding materials proper
26with the principal constituent melting at less than 400°C
C22C 13/00 2006.1
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
13Alloys based on tin
CPC
B23K 35/0222
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
02characterised by mechanical features, e.g. shape
0222for use in soldering, brazing
B23K 35/0238
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
02characterised by mechanical features, e.g. shape
0222for use in soldering, brazing
0233Sheets, foils
0238layered
B23K 35/26
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
24Selection of soldering or welding materials proper
26with the principal constituent melting at less than 400 degrees C
B23K 35/262
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
24Selection of soldering or welding materials proper
26with the principal constituent melting at less than 400 degrees C
262Sn as the principal constituent
C22C 13/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
13Alloys based on tin
H01L 21/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
52Mounting semiconductor bodies in containers
Applicants
  • 三菱マテリアル株式会社 MITSUBISHI MATERIALS CORPORATION [JP]/[JP]
Inventors
  • 大橋 東洋 OHASHI Touyou
  • 長友 義幸 NAGATOMO Yoshiyuki
  • 長瀬 敏之 NAGASE Toshiyuki
  • 黒光 祥郎 KUROMITSU Yoshirou
Agents
  • 志賀 正武 SHIGA Masatake
Priority Data
2012-28134625.12.2012JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) POWER MODULE
(FR) MODULE D'ALIMENTATION
(JA) パワーモジュール
Abstract
(EN) This power module has: a copper layer comprising copper or a copper alloy, provided on a circuit layer (12) surface bonded to a semiconductor element (3); and a soldered layer (20) formed by using a solder material and formed between the circuit layer (12) and the semiconductor element (3). An alloy layer (21) containing Sn as the main component thereof and also containing 0.5-10 mass% Ni and 30-40 mass% Cu is formed in the interface between the soldered layer (20) and the circuit layer (12). The thickness of this alloy layer (21) is set in the range of 2-20 µm, and has a thermal resistance increase rate of no more than 10% in a power cycle test in which the power cycle under conditions of a temperature difference of 80°C and a conduction duration of 5 s is set to a load of 100,000 times.
(FR) La présente invention concerne un module d'alimentation, comprenant : une couche de cuivre comprenant du cuivre ou un alliage de cuivre, disposée sur une surface de couche (12) de circuits liée à un élément à semi-conducteurs (3) ; et une couche soudée (20) formée à l'aide d'un matériau de soudage et formée entre la couche (12) de circuits et l'élément à semi-conducteurs (3). Une couche d'alliage (21), contenant du Sn en tant que son constituant principal et contenant également de 0,5 à 10 % en masse de Ni et de 30 à 40 % en masse de Cu, est formée dans l'interface entre la couche soudée (20) et la couche (12) de circuits. L'épaisseur de cette couche d'alliage (21) est établie dans la plage de 2 à 20 µm et présente un taux d'augmentation de résistance thermique non supérieur à 10 % dans un essai de cycle d'alimentation au cours duquel le cycle d'alimentation, dans des conditions d'une différence de température de 80 °C et d'une durée de conduction de 5 s, est établi à une charge de 100 000 fois.
(JA) 本発明のパワーモジュールは、回路層(12)のうち半導体素子(3)との接合面に、銅又は銅合金からなる銅層が設けられており、回路層(12)と半導体素子(3)との間には、はんだ材を用いて形成されたはんだ層(20)が形成されている。はんだ層(20)のうち回路層(12)との界面には、主成分としてSnを含有するとともに、Niを0.5mass%以上10mass%以下、Cuを30mass%以上40mass%以下、含有する合金層(21)が形成され、この合金層(21)の厚さが2μm以上20μm以下の範囲内とされており、パワーサイクル試験において、通電時間5秒、温度差80℃の条件のパワーサイクルを10万回負荷したときの熱抵抗上昇率が10%未満である。
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