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1. (WO2014100564) OCT SYSTEM WITH BONDED MEMS TUNABLE MIRROR VCSEL SWEPT SOURCE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/100564 International Application No.: PCT/US2013/076866
Publication Date: 26.06.2014 International Filing Date: 20.12.2013
IPC:
H01S 5/04 (2006.01) ,H01S 5/183 (2006.01) ,H01S 5/50 (2006.01) ,H01S 5/022 (2006.01) ,H01S 5/024 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
18
Surface-emitting lasers (SE-lasers)
183
having a vertical cavity (VCSE-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
50
Amplifier structures not provided for in groups H01S5/02-H01S5/30100
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
022
Mountings; Housings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
024
Cooling arrangements
Applicants:
AXSUN TECHNOLOGIES, INC. [US/US]; One Fortune Drive Billerica, Massachusetts 01821, US
Inventors:
FLANDERS, Dale C.; US
KUZNETSOV, Mark E.; US
ATIA, Walid A.; US
JOHNSON, Bartley C.; US
Agent:
HOUSTON, J. Grant; Houston & Associates, LLP 420 Bedford Street, Suite 155 Lexington, Massachusetts 02420, US
Priority Data:
13/723,82921.12.2012US
Title (EN) OCT SYSTEM WITH BONDED MEMS TUNABLE MIRROR VCSEL SWEPT SOURCE
(FR) SYSTÈME OCT AVEC SOURCE À BALAYAGE VCSEL RÉGLABLE PAR MEMS LIÉ
Abstract:
(EN) A microelectromechanical systems (MEMS)-tunable vertical-cavity surfaceemitting laser (VCSEL) in which the MEMS mirror is a bonded to the active region. This allows for a separate electrostatic cavity, that is outside the laser's optical resonant cavity. Moreover, the use of this cavity configuration allows the MEMS mirror to be tuned by pulling the mirror away from the active region. This reduces the risk of snap down. Moreover, since the MEMS mirror is now bonded to the active region, much wider latitude is available in the technologies that are used to fabricate the MEMS mirror. This is preferably deployed as a swept source in an optical coherence tomography (OCT) system.
(FR) La présente invention concerne un laser à émission par la surface (VCSEL) réglable par un microsystème électromécanique (MEMS) dans lequel le miroir MEMS est lié à la région active. Cela permet de créer une cavité électrostatique séparée qui est extérieure à la cavité de résonance optique du laser. De plus, l'utilisation de cette configuration de cavité permet au MEMS d'être réglé en retirant le miroir de la région active. Cela réduit le risque de rupture. De plus, le miroir MEMS est désormais lié à la région active, une latitude bien plus large est disponible dans les technologies qui sont utilisées pour fabriquer le miroir MEMS. Ceci est déployé de préférence en tant que source à balayage dans un système de tomographie par cohérence optique (OCT).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)