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1. WO2014051738 - NON-PLANAR SEMICONDUCTOR DEVICE HAVING GROUP III-V MATERIAL ACTIVE REGION WITH MULTI-DIELECTRIC GATE STACK

Publication Number WO/2014/051738
Publication Date 03.04.2014
International Application No. PCT/US2013/045507
International Filing Date 12.06.2013
IPC
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 99/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
99Subject matter not provided for in other groups of this subclass
H01L 29/0665
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
H01L 29/0673
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
0673oriented parallel to a substrate
H01L 29/201
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
201including two or more compounds ; , e.g. alloys
H01L 29/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
201including two or more compounds ; , e.g. alloys
205in different semiconductor regions ; , e.g. heterojunctions
Applicants
  • INTEL CORPORATION [US]/[US]
Inventors
  • DEWEY, Gilbert
  • RADOSAVLJEVIC, Marko
  • PILLARISETTY, Ravi
  • CHU-KUNG, Benjamin
  • MUKHERJEE, Niloy
Agents
  • MALLIE, Michael J.
Priority Data
13/629,15427.09.2012US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) NON-PLANAR SEMICONDUCTOR DEVICE HAVING GROUP III-V MATERIAL ACTIVE REGION WITH MULTI-DIELECTRIC GATE STACK
(FR) DISPOSITIF SEMI-CONDUCTEUR NON PLANAIRE AYANT UNE ZONE ACTIVE EN MATÉRIAU DU GROUPE III-V À EMPILEMENT DE GRILLE MULTIDIÉLECTRIQUE
Abstract
(EN) Non-planar semiconductor devices having group III-V material active regions with multi-dielectric gate stacks are described. For example, a semiconductor device includes a hetero-structure disposed above a substrate. The hetero-structure includes a three-dimensional group III-V material body with a channel region. A source and drain material region is disposed above the three-dimensional group III-V material body. A trench is disposed in the source and drain material region separating a source region from a drain region, and exposing at least a portion of the channel region. A gate stack is disposed in the trench and on the exposed portion of the channel region. The gate stack includes first and second dielectric layers and a gate electrode.
(FR) L'invention concerne des dispositifs semi-conducteurs non planaires ayant des zones actives en matériau du groupe III-V à empilements de grille multidiélectriques. Par exemple, un dispositif semi-conducteur comprend une hétérostructure disposée au-dessus d'un substrat. L'hétérostructure comprend un corps de matériau du groupe III-V tridimensionnel avec une zone de canal. Une zone de matériau de source et de drain est disposée au-dessus du corps de matériau du groupe III-V tridimensionnel. Une tranchée est disposée dans la zone de matériau de source et de drain séparant une zone de source d'une zone de drain et découvrant au moins une partie de la zone de canal. Un empilement de grille est disposé dans la tranchée et sur la partie découverte de la zone de canal. L'empilement de grille comprend des première et seconde couches diélectriques et une électrode de grille.
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