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1. WO2014050611 - MICROWAVE AMPLIFIER DEVICE

Publication Number WO/2014/050611
Publication Date 03.04.2014
International Application No. PCT/JP2013/074857
International Filing Date 13.09.2013
IPC
H03F 3/60 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
H03F 3/189 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High-frequency amplifiers, e.g. radio frequency amplifiers
H03F 3/20 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
CPC
H03F 1/0205
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
0205in transistor amplifiers
H03F 1/3205
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
32Modifications of amplifiers to reduce non-linear distortion
3205in field-effect transistor amplifiers
H03F 2200/108
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
108A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
H03F 2200/12
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
12A bias circuit for some stages being shown using transmission lines
H03F 2200/267
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
267A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
H03F 2200/391
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
391the output circuit of an amplifying stage comprising an LC-network
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 津山 祥紀 TSUYAMA Yoshinori
  • 野々村 博之 NONOMURA Hiroyuki
  • 大塚 浩志 OTSUKA Hiroshi
  • 能登 一二三 NOTO Hifumi
  • 安永 吉徳 YASUNAGA Yoshinori
  • 下沢 充弘 SHIMOZAWA Mitsuhiro
  • 藤本 雄一 FUJIMOTO Yuichi
Agents
  • 木村 満 KIMURA Mitsuru
Priority Data
2012-21086325.09.2012JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) MICROWAVE AMPLIFIER DEVICE
(FR) DISPOSITIF AMPLIFICATEUR HYPERFRÉQUENCE
(JA) マイクロ波増幅器
Abstract
(EN) The purpose of the invention is to reduce extreme performance deterioration caused on the basis of the frequency relationship of a specific beat signal even when a plurality of communication carriers are input in a wideband. A microwave amplifier device includes: a bias circuit formed from a line (20) having an electrical length of one quarter the wavelength at the frequency to be amplified by the microwave amplifier device and connected between the output terminal of an amplifier (11) and a bias voltage source (13), and a capacitor (14) connected between the terminal where the line (20) is connected to the bias voltage source (13) and a ground (10) that determines the reference potential of the microwave amplifier device; and a resonator circuit that includes a resistor (15) and a capacitor (16) connected in series between the ground (10) and the terminal where the line (20) is connected to the bias voltage source (13).
(FR) La présente invention concerne la réduction de la détérioration extrême du fonctionnement, celle-ci étant en fonction de la relation de fréquence d'un signal de battement spécifique même lorsqu'une pluralité de porteuses de communication sont injectées dans une large bande. Un dispositif amplificateur hyperfréquence comprend : un circuit de polarisation formé d'une ligne (20) ayant une longueur électrique d'un quart de la longueur d'onde à la fréquence à amplifier par le dispositif amplificateur hyperfréquence et connectée entre la borne de sortie d'un amplificateur (11) et une source de tension de polarisation (13), et un condensateur (14) connecté entre la borne où la ligne (20) est connectée à la source de tension de polarisation (13) et une masse (10) qui détermine le potentiel de référence du dispositif amplificateur hyperfréquence ; un circuit de résonateur qui comprend une résistance (15) et un condensateur (16) connectés en série entre la masse (10) et la borne où la ligne (20) est connectée à la source de tension de polarisation (13).
(JA)  複数通信キャリアを広帯域で入力した場合についても、特定のビート信号の周波数関係に応じて発生する極端な性能劣化を抑制する。増幅器(11)の出力端子とバイアス電圧源(13)との間に接続される、マイクロ波増幅器の増幅対象の周波数における1/4波長の電気長を有する線路(20)、および、線路(20)のバイアス電圧源(13)に接続する端子とマイクロ波増幅器の基準電位を定める接地(10)との間に接続されるコンデンサ(14)、から構成されるバイアス回路と、線路(20)のバイアス電圧源(13)に接続する端子と接地(10)との間に、直列に接続される抵抗体(15)およびコンデンサ(16)を含む共振回路と、を備える。
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