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1. (WO2014042319) CIS/CGS/CIGS THIN FILM MANUFACTURING METHOD AND SOLAR CELL MANUFACTURED BY USING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2014/042319 International Application No.: PCT/KR2012/011452
Publication Date: 20.03.2014 International Filing Date: 26.12.2012
IPC:
H01L 31/0749 (2012.01) ,H01L 31/0216 (2014.01) ,H01L 31/042 (2014.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0749
including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0216
Coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
한국생산기술연구원 KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY [KR/KR]; 충청남도 천안시 서북구 입장면 양대기로 길 89 89, Yangdaegiro-gil, Ipjang-myeon, Seobuk-gu, Cheonan-si, Chungcheongnam-do 331-822, KR
Inventors:
김태원 KIM, Tae Won; KR
박재철 PARK, Jae Cheol; KR
김호성 KIM, Ho Sung; KR
오익현 OH, Ik Hyun; KR
이전량 LEE, Jeon Ryang; KR
구보라 KOO, Bo Ra; KR
이승현 LEE, Seung Hyoun; KR
Agent:
조의제 JO, Eui Je; 서울시 강남구 강남대로354 혜천빌딩 1405호 RM. 1405, HyeCheon Bldg. #354 Gangnamdaero, Gangnam-gu Seoul 135-792, KR
Priority Data:
10-2012-010272817.09.2012KR
10-2012-010312018.09.2012KR
10-2012-010717126.09.2012KR
Title (EN) CIS/CGS/CIGS THIN FILM MANUFACTURING METHOD AND SOLAR CELL MANUFACTURED BY USING SAME
(FR) PROCÉDÉ DE FABRICATION DE COUCHE MINCE DE CIS/CGS/CIGS ET CELLULE SOLAIRE FABRIQUÉE PAR UTILISATION DE CELUI-CI
(KO) CIS/CGS/CIGS 박막 제조방법 및 이를 이용하여 제조된 태양전지
Abstract:
(EN) The present invention relates to a CIS/CGS/CIGS thin film manufacturing method and a solar cell manufactured by using the same. The present invention manufactures a CIS thin film, a CGS thin film, and a CIGS thin film by depositing an electrode layer on an upper part of a substrate, depositing a light-absorbing layer on an upper part of the electrode layer by implementing a sputtering process using a CIS single target containing Cu, In and Se and a CGS single target containing Cu, Ga and Se, and is capable of manufacturing a solar cell having excellent structural, optical, and electrical properties by using the same. Thus, the present invention can simplify a manufacturing process, can manufacture a thin film having various properties according to a control for an (In, Ga) combination ratio, and has the advantage of being economical and by depositing CIG, CGS, and CIGS light-absorbing layers through only one sputtering process using each single target of CIS(CuInSe2) and CGS(CuGaSe2) to manufacture the thin film.
(FR) La présente invention porte sur un procédé de fabrication de couche mince de CIS/CGS/CIGS et sur une cellule solaire fabriquée par utilisation de celui-ci. La présente invention fabrique une couche mince de CIS, une couche mince de CGS, et une couche mince de CIGS par dépôt d'une couche d'électrode sur une partie supérieure d'un substrat, dépôt d'une couche d'absorption de lumière sur une partie supérieure de la couche d'électrode par mise en œuvre d'un processus de pulvérisation en utilisant une cible unique de CIS contenant du Cu, In et Se et une cible unique de CGS contenant du Cu, Ga et Se, et est capable de fabriquer une cellule solaire ayant d'excellentes propriétés structurelles, optiques et électriques par utilisation de celles-ci. Ainsi, la présente invention peut simplifier un processus de fabrication, peut fabriquer une couche mince ayant diverses propriétés selon une commande pour un rapport de combinaison (In, Ga), et a l'avantage d'être économique et par dépôt de couches d'absorption de lumière de CIG, CGS et CIGS à travers seulement un processus de pulvérisation en utilisant chaque cible unique de CIS(CuInSe2) et CGS(CuGaSe2) pour fabriquer la couche mince.
(KO) 본 발명은 CIS/CGS/CIGS 박막 제조방법 및 이를 이용하여 제조된 태양전지에 관한 것이다. 본 발명은 기판 상부에 전극층을 증착하고, 전극층의 상부에 구리(Cu), 인듐(In) 및 셀렌(Se)을 포함하는 CIS 단일타겟과 구리(Cu), 갈륨(Ga) 및 셀렌(Se)을 포함하는 CGS 단일타겟을 스퍼터링 처리하여 광흡수층을 증착하여 CIS 박막, CGS 박막, CIGS 박막을 제조하며, 이를 이용하여 구조적, 광학적, 전기적으로 특성이 우수한 태양전지를 제조하도록 구성된다. 따라서, 본 발명은 CIS(CuInSe2)와 CGS(CuGaSe2) 각각의 단일타겟을 이용한 단 한번의 스퍼터링 공정으로 CIG나 CGS, CIGS 광흡수층을 증착하여 박막을 제조할 수 있어 공정의 간소화뿐 아니라 (In, Ga)의 조성비 조절에 따라 다양한 특성의 박막 제조가 가능하며, 경제성 및 효율성 측면에서 매우 유리한 효과를 제공한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)
Also published as:
US20150263210