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1. (WO2013173409) SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2013/173409 International Application No.: PCT/US2013/041061
Publication Date: 21.11.2013 International Filing Date: 15.05.2013
IPC:
B82B 3/00 (2006.01) ,H01B 1/12 (2006.01) ,B82B 1/00 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
B
NANO-STRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
3
Manufacture or treatment of nano-structures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
06
mainly consisting of other non-metallic substances
12
organic substances
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
B
NANO-STRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
1
Nano-structures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
Applicants:
QD VISION, INC. [US/US]; 29 Hartwell Avenue Lexington, MA 02421, US
Inventors:
HAMILTON, Charles; US
KAMPLAIN, Justin, W.; US
MAUCK, Catherine; US
MILLER, Whitney; US
STECKEL, Jonathan, S.; US
WANG, Chunming; US
WANG, Zhiming; US
Agent:
FINNEGAN, Martha, Ann; Qd Vision, Inc 29 Hartwell Avenue Lexington, MA 02421, US
Priority Data:
61/647,29615.05.2012US
Title (EN) SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION
(FR) NANOCRISTAUX SEMICONDUCTEURS ET PROCÉDÉ POUR LEUR PRÉPARATION
Abstract:
(EN) A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion.
(FR) L'invention concerne un procédé de préparation de nanocristaux semiconducteurs. Le procédé comprend les étapes consistant à ajouter un ou plusieurs précurseurs de cations et un ou plusieurs précurseurs d'anions dans un mélange de réaction comprenant un solvant dans un récipient de réaction, à maintenir le mélange de réaction à une première température pendant une première durée suffisante pour produire des particules-germes de nanocristaux semiconducteurs du cation et de l'anion, et à maintenir le mélange de réaction à une deuxième température supérieure à la première température pendant une deuxième durée suffisante pour agrandir les particules-germes de nanocristaux semiconducteurs afin de produire des nanocristaux semiconducteurs à partir du cation et de l'anion.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)