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1. (WO2013163137) PASSIVATION TECHNIQUE FOR WIDE BANDGAP SEMICONDUCTOR DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/163137    International Application No.:    PCT/US2013/037726
Publication Date: 31.10.2013 International Filing Date: 23.04.2013
IPC:
H01L 21/02 (2006.01)
Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY [US/US]; 77 Massachusetts Avenue Cambridge, MA 02139 (US)
Inventors: GAO, Feng; (US).
PALACIOS, Tomas, Apostol; (US).
LU, Bin; (US).
CHEN, Di; (US)
Agent: JENSEN, Robert, A.; Wolf, Greenfield & Sacks, P.C. 600 Atlantic Avenue Boston, MA 02210-2206 (US)
Priority Data:
61/636,787 23.04.2012 US
Title (EN) PASSIVATION TECHNIQUE FOR WIDE BANDGAP SEMICONDUCTOR DEVICES
(FR) TECHNIQUE DE PASSIVATION POUR DISPOSITIFS SEMI-CONDUCTEURS À LARGE BANDE INTERDITE
Abstract: front page image
(EN)A method of protecting a semiconductor structure from water and a semiconductor structure formed by the method. The semiconductor structure includes a wide-bandgap semiconductor material in which at least one semiconductor device is formed. The method includes heating the semiconductor structure in a vacuum to a temperature of at least 200° C to remove water from the semiconductor structure. The method also includes, after the heating of the semiconductor structure, forming a layer comprising a hydrophobic material over the semiconductor structure. The semiconductor structure is kept in the vacuum between the heating of the semiconductor structure and the forming of the layer comprising the hydrophobic material.
(FR)L'invention concerne un procédé de protection contre l'eau d'une structure semi-conductrice et une structure semi-conductrice obtenue par le procédé. La structure semi-conductrice comprend un matériau semi-conducteur à large bande interdite dans lequel au moins un dispositif semi-conducteur est formé. Le procédé comprend le chauffage de la structure semi-conductrice sous vide à une température d'au moins 200 °C pour éliminer l'eau de la structure semi-conductrice. Le procédé comprend en outre, après le chauffage de la structure semi-conductrice, la formation d'une couche comportant un matériau hydrophobe au-dessus de la structure semi-conductrice. La structure semi-conductrice est maintenue sous vide entre le chauffage de la structure semi-conductrice et la formation de la couche contenant le matériau hydrophobe.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)