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1. WO2013162927 - METHOD OF FORMING A MICRO LED DEVICE WITH SELF-ALIGNED METALLIZATION STACK

Publication Number WO/2013/162927
Publication Date 31.10.2013
International Application No. PCT/US2013/036477
International Filing Date 12.04.2013
IPC
H01L 33/36 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
CPC
H01L 2224/7598
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
75Apparatus for connecting with bump connectors or layer connectors
7598specially adapted for batch processes
H01L 2224/95
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
93Batch processes
95at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
H01L 24/75
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
75Apparatus for connecting with bump connectors or layer connectors
H01L 24/83
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
83using a layer connector
H01L 24/95
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
93Batch processes
95at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
Applicants
  • LUXVUE TECHNOLOGY CORPORATION [US]/[US]
Inventors
  • HU, Hsin-Hua
  • BIBL, Andreas
Agents
  • VINCENT, Lester, J.
Priority Data
13/458,93227.04.2012US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF FORMING A MICRO LED DEVICE WITH SELF-ALIGNED METALLIZATION STACK
(FR) PROCÉDÉ POUR LA FORMATION DE MICRO-DISPOSITIF À DIODES ÉLECTROLUMINESCENTES AVEC EMPILEMENT DE MÉTALLISATION AUTO-ALIGNÉE
Abstract
(EN)
A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, a patterned sacrificial layer is utilized to form a self-aligned metallization stack and is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes.
(FR)
La présente invention concerne un procédé de fabrication ainsi que le transfert d'un micro-dispositif et d'un réseau de micro-dispositifs vers un substrat de réception. Selon un mode de réalisation, une couche sacrificielle à motifs est utilisée pour former un empilement de métallisation auto-alignée et est utilisée comme une couche d'arrêt de gravure lors de la gravure de la couche de diodes à jonction p-n pour former une pluralité de diodes à jonction p-n.
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