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1. WO2013162916 - SYSTEM AND METHOD FOR ALIGNING SUBSTRATES FOR MULTIPLE IMPLANTS

Publication Number WO/2013/162916
Publication Date 31.10.2013
International Application No. PCT/US2013/036311
International Filing Date 12.04.2013
IPC
H01J 37/317 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01L 21/266 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
266using masks
H01L 31/0224 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
CPC
H01J 2237/31711
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
30Electron or ion beam tubes for processing objects
317Processing objects on a microscale
31701Ion implantation
31706characterised by the area treated
3171patterned
31711using mask
H01J 37/3045
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
304Controlling tubes by information coming from the objects ; or from the beam; , e.g. correction signals
3045Object or beam position registration
H01J 37/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
3171for ion implantation
H01L 21/266
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
266using masks
Applicants
  • VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US]/[US]
Inventors
  • GRAFF, John W
  • RIORDON, Benjamin B.
  • BATEMAN, Nicholas P. T.
Agents
  • DAISAK, Daniel
Priority Data
13/458,44127.04.2012US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEM AND METHOD FOR ALIGNING SUBSTRATES FOR MULTIPLE IMPLANTS
(FR) SYSTÈME ET PROCÉDÉ POUR ALIGNER DES SUBSTRATS EN VUE DE PRODUIRE MULTIPLES IMPLANTS
Abstract
(EN)
A system and method are disclosed for aligning substrates during successive process steps, such as ion implantation steps, is disclosed. Implanted regions (302) are created on a substrate (300). After implantation, an image is obtained of the implanted regions, and a fiducial (310) is provided on the substrate in known relation to at least one of the implanted regions. A thermal anneal process is performed on the substrate such that the implanted regions are no longer visible but the fiducial remains visible. The position of the fiducial may be used in downstream process steps to properly align pattern masks over the implanted regions. The fiducial also may be applied to the substrate before any ion implanting of the substrate is performed. The position of the fiducial with respect to an edge or a comer of the substrate may be used for aligning during downstream process steps. Other embodiments are described and claimed.
(FR)
L'invention concerne un système et un procédé d'alignement de substrats lors d'étapes de traitement successives, telles que des étapes d'implantation d'ions. Le procédé consiste à produire des régions implantées (302) sur un substrat (300) ; après l'implantation, à obtenir une image des régions implantées, et à former un repère (310) sur le substrat, ledit repère présentant une relation connue par rapport à au moins une des régions implantées ; à mettre en oeuvre un traitement de recuit thermique sur le substrat, de sorte que les régions implantées ne soient plus visibles, mais que le repère reste visible. La position du repère peut être utilisée lors d'étapes de traitement en aval pour aligner de manière adéquate des masques de motif sur les régions implantées. Le repère peut aussi être appliqué sur le substrat avant toute implantation d'ions dans le substrat. La position du repère par rapport à un bord ou à un coin du substrat peut être utilisée en vue d'un alignement, lors d'étapes de traitement en aval. D'autres modes et formes de réalisation sont décrits et revendiqués.
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