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1. (WO2013162780) BACK CONTACT FOR PHOTOVOLTAIC DEVICES SUCH AS COPPER-INDIUM-DISELENIDE SOLAR CELLS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/162780    International Application No.:    PCT/US2013/032875
Publication Date: 31.10.2013 International Filing Date: 19.03.2013
IPC:
H01L 31/0392 (2006.01), H01L 31/0749 (2012.01), H01L 31/18 (2006.01), H01L 31/0224 (2006.01)
Applicants: GUARDIAN INDUSTRIES CORP. [US/US]; 2300 Harmon Road Auburn Hills, MI 48326-1714 (US)
Inventors: KRASNOV, Alexey; (US).
DEN BOER, Willem; (US)
Agent: RHOA, Joseph, A.; Nixon & Vanderhye P.C. 901 North Glebe Road, 11Th Floor Arlington, VA 22203-1808 (US)
Priority Data:
13/455,232 25.04.2012 US
Title (EN) BACK CONTACT FOR PHOTOVOLTAIC DEVICES SUCH AS COPPER-INDIUM-DISELENIDE SOLAR CELLS
(FR) CONTACT ARRIÈRE POUR DISPOSITIFS PHOTOVOLTAÏQUES TELS QUE CELLULES SOLAIRES EN CUIVRE-INDIUM-DISÉLÉNIURE
Abstract: front page image
(EN)A photovoltaic device (20) (e.g., solar cell) includes: a front substrate (34) (e.g., glass substrate); a semiconductor absorber film (28); a back contact (36) including a first conductive layer (24) of or including copper (Cu) and a second conductive layer (26) of or including molybdenum (Mo); and a rear substrate (22) (e.g., glass substrate). The first conductive layer (24) of or including copper is located between at least the rear substrate (22) and the second conductive layer (26) of or including molybdenum, and wherein the semiconductor absorber film (28) is located between at least the back contact (22) and the front substrate (34).
(FR)Selon l'invention, un dispositif photovoltaïque (p. ex. cellule solaire) comprend: un substrat avant (par exemple, un substrat de verre); un film absorbant semi-conducteur; un contact arrière comprenant une première couche conductrice en cuivre (Cu) ou comprenant du cuivre et une seconde couche conductrice en molybdène (Mo) ou comprenant du molybdène; et un substrat arrière (par exemple, un substrat de verre) La première couche conductrice en cuivre ou comprenant du cuivre est située entre au moins le substrat arrière et la seconde couche conductrice en molybdène ou comprenant du molybdène. Le film absorbant semi-conducteur est situé entre au moins le contact arrière et le substrat avant.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)