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1. (WO2013162553) NONLINEAR MEMRISTORS

Pub. No.:    WO/2013/162553    International Application No.:    PCT/US2012/035024
Publication Date: Fri Nov 01 00:59:59 CET 2013 International Filing Date: Thu Apr 26 01:59:59 CEST 2012
IPC: H01L 27/105
H01L 21/8239
Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
YANG, Jianhua
ZHANG, Minxian Max
PICKETT, Matthew D.
WILLIAMS, R. Stanley
Inventors: YANG, Jianhua
ZHANG, Minxian Max
PICKETT, Matthew D.
WILLIAMS, R. Stanley
Title: NONLINEAR MEMRISTORS
Abstract:
A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.