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1. (WO2013162020) CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE SURFACE

Pub. No.:    WO/2013/162020    International Application No.:    PCT/JP2013/062464
Publication Date: Fri Nov 01 00:59:59 CET 2013 International Filing Date: Sat Apr 27 01:59:59 CEST 2013
IPC: H01L 21/304
C11D 7/32
C11D 7/36
Applicants: WAKO PURE CHEMICAL INDUSTRIES, LTD.
和光純薬工業株式会社
Inventors: KAWADA Hiromi
川田 博美
MIZUTA Hironori
水田 浩徳
MAESAWA Tsuneaki
前沢 典明
Title: CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE SURFACE
Abstract:
The purpose of the present invention is to provide: a cleaning agent for semiconductor substrates, which excellently removes fine polishing particles of silica, alumina or the like remaining on a semiconductor substrate surface, in particular on a silicon oxide film surface such as a TEOS film after a chemical mechanical polishing process, while having excellent non-corrosive properties for tungsten wiring lines or tungsten alloy wiring lines; and a method for processing a semiconductor substrate surface. The present invention relates to: a cleaning agent for semiconductor substrates, which is used in a post-process of a chemical mechanical polishing process for a semiconductor substrate that comprises a tungsten wiring line or a tungsten alloy wiring line and a silicon oxide film, and which is characterized by containing (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in each molecule and (C) water, and is also characterized by having a pH of more than 6 but less than 7; and a method for processing a semiconductor substrate surface.