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1. (WO2013161756) PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE FILM, PERMANENT MASK RESIST AND PROCESS FOR PRODUCING PERMANENT MASK RESIST
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/161756 International Application No.: PCT/JP2013/061774
Publication Date: 31.10.2013 International Filing Date: 22.04.2013
IPC:
G03F 7/004 (2006.01) ,C08L 63/00 (2006.01) ,G03F 7/027 (2006.01) ,G03F 7/031 (2006.01) ,G03F 7/037 (2006.01) ,H05K 3/28 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
63
Compositions of epoxy resins; Compositions of derivatives of epoxy resins
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
027
Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
027
Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
028
with photosensitivity-increasing substances, e.g. photoinitiators
031
Organic compounds not covered by group G03F7/02967
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
027
Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
032
with binders
037
the binders being polyamides or polyimides
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
22
Secondary treatment of printed circuits
28
Applying non-metallic protective coatings
Applicants:
日立化成株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 東京都千代田区丸の内一丁目9番2号 9-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1006606, JP
Inventors:
名越 俊昌 NAGOSHI Toshimasa; JP
田中 恵生 TANAKA Shigeo; JP
蔵渕 和彦 KURAFUCHI Kazuhiko; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; 東京都千代田区丸の内二丁目1番1号丸の内 MY PLAZA(明治安田生命ビル) 9階 創英国際特許法律事務所 SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA (Meiji Yasuda Life Bldg.) 9th fl., 1-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1000005, JP
Priority Data:
2012-09811023.04.2012JP
Title (EN) PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE FILM, PERMANENT MASK RESIST AND PROCESS FOR PRODUCING PERMANENT MASK RESIST
(FR) COMPOSITION DE RÉSINE PHOTOSENSIBLE, FILM PHOTOSENSIBLE, RÉSERVE DE MASQUE PERMANENT ET PROCÉDÉ DE PRODUCTION DE RÉSERVE DE MASQUE PERMANENT
(JA) 感光性樹脂組成物、感光性フィルム、永久マスクレジスト及び永久マスクレジストの製造方法
Abstract:
(EN) A photosensitive resin composition which comprises (A) a resin that has an ethylenically unsaturated group and a carboxyl group, (B) a photopolymerization initiator, (C) an epoxy resin, (D) an inorganic filler and (E) an organic filler that has an amino group and which satisfies the requirements (I) to (IV): (I) the inorganic filler (D) comprises (d-1) a first inorganic filler and (d-2) a second inorganic filler; (II) the first inorganic filler (d-1) has a mean particle diameter of 100 to 500nm, a maximum particle diameter of 2μm or less and a refractive index of 1.5 to 1.8; (III) the second inorganic filler (d-2) has a mean particle diameter of 5 to 200nm and a refractive index of 1.2 to less than 1.5; and (IV) the organic filler (E) contains an organic filler that has a mean particle diameter of 500nm or less and a maximum particle diameter of 2μm or less.
(FR) L'invention concerne une composition de résine photosensible qui comprend (A) une résine qui a un groupe éthyléniquement insaturé et un groupe carboxyle, (B) un initiateur de photopolymérisation, (C) une résine époxy, (D) une charge inorganique et (E) une charge organique qui comporte un groupe amino et qui satisfait les exigences (I) à (IV) : (I) la charge inorganique (D) comprend (d-1) une première charge inorganique et (d-2) une seconde charge inorganique ; (II) la première charge inorganique (d-1) a un diamètre de particule moyen de 100 à 500 nm, un diamètre de particule maximal de 2 µm ou moins et un indice de réfraction de 1,5 à 1,8 ; (III) la seconde charge inorganique (d-2) a un diamètre de particule moyen de 5 à 200 nm, et un indice de réfraction de 1,2 à moins de 1,5 ; et (IV) la charge organique (E) contient une charge organique qui a un diamètre de particule moyen de 500 nm ou moins et un diamètre de particule maximal de 2 µm ou moins.
(JA)  本発明は、(A)エチレン性不飽和基とカルボキシル基を有する樹脂、(B)光重合開始剤、(C)エポキシ樹脂、(D)無機フィラー、及び、(E)アミノ基を有する有機フィラーを含有する感光性樹脂組成物であって、下記条件(I)~(IV)を満たす感光性樹脂組成物である。 (I)(D)が、(d-1)第一の無機フィラー及び(d-2)第二の無機フィラーを含有する。 (II)(d-1)の平均粒子径が100nm~500nm、最大粒子径が2μm以下、屈折率が1.5~1.8である。 (III)(d-2)の平均粒子径が5nm~200nm、屈折率が1.2以上1.5未満である。 (IV)(E)は、平均粒子径が500nm以下、最大粒子径が2μm以下である有機フィラーを含有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)