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1. (WO2013161683) PHOSPHOR, METHOD FOR MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/161683 International Application No.: PCT/JP2013/061553
Publication Date: 31.10.2013 International Filing Date: 18.04.2013
IPC:
C09K 11/80 (2006.01) ,C09K 11/08 (2006.01) ,C30B 15/04 (2006.01) ,C30B 29/28 (2006.01) ,H01L 33/50 (2010.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
11
Luminescent, e.g. electroluminescent, chemiluminescent, materials
08
containing inorganic luminescent materials
77
containing rare earth metals
80
containing aluminium or gallium
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
11
Luminescent, e.g. electroluminescent, chemiluminescent, materials
08
containing inorganic luminescent materials
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
02
adding crystallising materials or reactants forming it in situ to the melt
04
adding doping materials, e.g. for np-junction
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
22
Complex oxides
28
with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
Applicants:
株式会社光波 KOHA CO., LTD. [JP/JP]; 東京都練馬区東大泉1丁目19番43号 1-19-43, Higashi-Oizumi, Nerima-ku, Tokyo 1788511, JP
独立行政法人物質・材料研究機構 NATIONAL INSTITUTE FOR MATERIALS SCIENCE [JP/JP]; 茨城県つくば市千現一丁目2番地1 2-1, Sengen 1-chome, Tsukuba-shi, Ibaraki 3050047, JP
Inventors:
渡邊 誠 WATANABE, Makoto; JP
猪股 大介 INOMATA, Daisuke; JP
青木 和夫 AOKI, Kazuo; JP
島村 清史 SHIMAMURA, Kiyoshi; JP
ガルシア ビジョラ エンカルナシオン アントニア GARCIA VILLORA, Encarnacion Antonia; JP
Agent:
平田 忠雄 HIRATA, Tadao; 東京都新宿区北新宿二丁目21番1号 新宿フロントタワー29階 平田国際特許事務所 Hirata & Partners, 29th Floor, Shinjuku Front Tower, 2-21-1, Kitashinjuku, Shinjuku-ku, Tokyo 1690074, JP
Priority Data:
2012-09931524.04.2012JP
Title (EN) PHOSPHOR, METHOD FOR MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE
(FR) PHOSPHORE, PROCÉDÉ DE FABRICATION ASSOCIÉ ET DISPOSITIF ÉLECTROLUMINESCENT
(JA) 蛍光体及びその製造方法、並びに発光装置
Abstract:
(EN) One purpose of the invention is to provide a phosphor with excellent quantum efficiency, a method for manufacturing the same, and a light-emitting device that uses this phosphor. One embodiment provides a phosphor comprising monocrystals with YAG crystals as a matrix, the quantum efficiency of the phosphor at 25°C being 92% or higher at an excitation light wavelength of 460 nm.
(FR) La présente invention concerne un phosphore présentant un excellent rendement quantique, un procédé de fabrication associé et un dispositif électroluminescent qui utilise ce phosphore. Dans un mode de réalisation, l'invention concerne un phosphore comprenant des monocristaux avec des cristaux YAG comme matrice, le rendement quantique du phosphore à 25 °C étant de 92 % ou plus à une longueur d'onde de lumière d'excitation de 460 nm.
(JA) 目的の1つとして、量子効率に優れる蛍光体及びその製造方法、並びにその蛍光体を用いた発光装置を提供する。 一実施の形態として、励起光の波長が460nmであるときの25℃での量子効率が92%以上である、YAG結晶を母結晶とする単結晶からなる蛍光体を提供する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)