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1. WO2013161527 - MULTILAYER WIRING SUBSTRATE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2013/161527
Publication Date 31.10.2013
International Application No. PCT/JP2013/060190
International Filing Date 03.04.2013
IPC
H05K 3/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
46Manufacturing multi-layer circuits
H01L 23/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
H01L 23/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
CPC
H01L 23/145
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
145Organic substrates, e.g. plastic
H01L 23/3735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
H01L 23/3737
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3737Organic materials with or without a thermoconductive filler
H01L 23/49822
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49822Multilayer substrates
H01L 23/49827
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
H01L 23/49894
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49866characterised by the materials
49894Materials of the insulating layers or coatings
Applicants
  • 日本特殊陶業株式会社 NGK SPARK PLUG CO.,LTD. [JP]/[JP]
Inventors
  • 前田真之介 MAEDA, Shinnosuke
Agents
  • 渥美久彦 ATSUMI, Hisahiko
Priority Data
2012-10190526.04.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MULTILAYER WIRING SUBSTRATE AND MANUFACTURING METHOD THEREOF
(FR) SUBSTRAT DE CÂBLAGE MULTICOUCHE ET MÉTHODE DE FABRICATION DE CELUI-CI
(JA) 多層配線基板及びその製造方法
Abstract
(EN)
Provided is a multilayer wiring substrate capable of sufficiently ensuring adhesion between resin insulation layers and conductor layers and which has excellent connection reliability. This multilayer wiring substrate (10) has a multilayer build-up structure comprising multiple resin insulation layers (33-36) and multiple conductor layers (42) laminated alternately. The resin insulation layers (33-36) comprise a lower insulation layer (51) and an upper insulation layer (52) provided on the lower insulation layer (51), and on the surface of the upper insulation layer (52) is formed a conductor layer (42). The upper insulation layer (52) is formed thinner than the lower insulation layer (51), and the volume ratio of the silica filler in the upper insulation layer (52) is less than the volume ratio of the silica filler and glass cloth in the lower insulation layer (51).
(FR)
L'invention concerne un substrat de câblage multicouche capable d'assurer l'adhérence suffisante entre les couches de résine isolantes et les couches de conducteur et qui offre une excellente fiabilité de connexion. Ce substrat de câblage multicouche (10) comprend une structure de construction multicouche constituée de plusieurs couches de résine isolantes (33-36) et de plusieurs couches de conducteur (42) stratifiées alternativement. Les couches de résine isolantes (33-36) sont constituées d'une couche d'isolation inférieure (51) et d'une couche d'isolation supérieure (52) placée sur la couche d'isolation inférieure (51), et une couche de conducteur (42) est formée sur la surface de la couche d'isolation supérieure (52). La couche d'isolation supérieure (52) est plus fine que la couche d'isolation inférieure (51), et le rapport volumique de la silice de charge dans la couche d'isolation supérieure (52) est inférieur au rapport volumique de la silice de charge et de la toile de verre dans la couche d'isolation inférieure (51).
(JA)
 樹脂絶縁層と導体層との密着性を十分に確保することができ、接続信頼性に優れた多層配線基板を提供する。 多層配線基板(10)は、複数の樹脂絶縁層(33~36)及び複数の導体層(42)を交互に積層して多層化したビルドアップ構造を有する。樹脂絶縁層(33~36)は、下側絶縁層(51)と下側絶縁層(51)上に設けられた上側絶縁層(52)とからなり、上側絶縁層(52)の表面上に導体層(42)が形成される。上側絶縁層(52)は、下側絶縁層(51)よりも薄く形成され、上側絶縁層(52)に占めるシリカフィラーの体積割合は、下側絶縁層(51)に占めるシリカフィラー及びガラスクロスの体積割合よりも少ない。
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