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1. WO2013161145 - BACKSIDE BONDED SOLAR CELL AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2013/161145
Publication Date 31.10.2013
International Application No. PCT/JP2013/000916
International Filing Date 19.02.2013
IPC
H01L 31/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
CPC
H01L 31/022441
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
H01L 31/03529
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
03529Shape of the potential jump barrier or surface barrier
H01L 31/0682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0682back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
H01L 31/0747
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0745comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Applicants
  • パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP]/[JP]
Inventors
  • 篠原 亘 SHINOHARA, Wataru
  • 本間 運也 HOMMA, Kazunari
Agents
  • 特許業務法人YKI国際特許事務所 YKI PATENT ATTORNEYS
Priority Data
2012-10212027.04.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) BACKSIDE BONDED SOLAR CELL AND METHOD FOR MANUFACTURING SAME
(FR) CELLULE SOLAIRE LIÉE CÔTÉ ARRIÈRE ET SON PROCÉDÉ DE FABRICATION
(JA) 裏面接合型太陽電池及びその製造方法
Abstract
(EN)
This backside bonded solar cell has a first conductivity type contact region and a second conductivity type contact region on the principal surface on the opposite side from the light incidence surface, the first conductivity type contact region being a region of homojunction between a crystalline base layer and a crystalline first conductivity type layer, and the second conductivity type contact region being a region of heterojunction between a base layer, an amorphous i type layer, and a second conductivity type layer.
(FR)
La présente invention concerne une cellule solaire liée côté arrière comportant une région de contact d'un premier type de conductivité et une région de contact d'un second type de conductivité sur la surface principale sur le côté opposé de la surface d'incidence de la lumière, la région de contact du premier type de conductivité étant une région d'homojonction entre une couche de base cristalline et une couche du premier type de conductivité cristalline, et la région de contact du second type de conductivité étant une région d'hétérojonction entre une couche de base, une couche amorphe du type i, et une couche du second type de conductivité.
(JA)
 光の入射面と反対側の主面に第1導電型コンタクト領域及び第2導電型コンタクト領域を有し、第1導電型コンタクト領域は、結晶質のベース層と結晶質の第1導電型層とがホモ接合された領域であり、第2導電型コンタクト領域は、ベース層と非結晶質のi型層及び第2導電型層とがヘテロ接合された領域である裏面接合型太陽電池とする。
Also published as
Latest bibliographic data on file with the International Bureau