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1. (WO2013161138) SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/161138 International Application No.: PCT/JP2013/000396
Publication Date: 31.10.2013 International Filing Date: 25.01.2013
IPC:
H01L 27/095 (2006.01) ,H01L 21/338 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01) ,H01L 29/778 (2006.01) ,H01L 29/812 (2006.01) ,H02M 1/08 (2006.01)
Applicants: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.[JP/JP]; 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors: INADA, Hiroshi; null
MORITA, Tatsuo; null
Agent: MAEDA & PARTNERS; Osaka-Marubeni Bldg.5F,5-7, Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
Priority Data:
2012-10109926.04.2012JP
Title (EN) SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS
(FR) DISPOSITIF SEMICONDUCTEUR ET APPAREIL DE CONVERSION ÉLECTRIQUE
(JA) 半導体装置および電力変換装置
Abstract: front page image
(EN) A switch apparatus (300B) has a power semiconductor chip (301B), and a drive circuit (302) that drives the power semiconductor chip. A path having a main current (204) flowing therein in the power semiconductor chip (301B) is connected to a first source terminal (202A), and a grounding terminal of the drive circuit (302) is connected to a second source terminal (202B) of the power semiconductor chip (301B). Consequently, a gate drive path and the path having the main current flowing therein are isolated from each other, and influence to a gate-source voltage (Vgs) due to an induced electromotive force generated due to source parasitic inductance (307C) is reduced.
(FR) Selon l'invention, un appareil de commutation (300B) comprend une puce semiconductrice de puissance (301B) et un circuit d'attaque (302) qui commande la puce semiconductrice de puissance. Un trajet de la puce semiconductrice de puissance (301B) sur lequel circule un courant principal (204) est connecté à une première borne de source (202A) et une borne de masse du circuit d'attaque (302) est connectée à une seconde borne de source (202B) de la puce semiconductrice de puissance (301B). En conséquence, un trajet de commande de grille et le trajet sur lequel circule le courant principal sont isolés l'un de l'autre et l'influence exercée sur une tension grille-source (Vgs) due à une force électromotrice induite en raison d'une inductance parasite de source (307C) est réduite.
(JA)  スイッチ装置(300B)は、パワー半導体チップ(301B)と、それを駆動する駆動回路(302)とを有する。パワー半導体チップ(301B)の内部にて主電流(204)が流れる経路は第1のソース端子(202A)に接続し、駆動回路(302)の接地端子はパワー半導体チップ(301B)の第2のソース端子(202B)に接続する。これにより、ゲート駆動経路と主電流が流れる経路とが互いに分離され、ソース寄生インダクタンス(307C)に起因した誘導起電力によるゲート・ソース間電圧(Vgs)への影響が低減される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)