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1. WO2013159615 - VERTICAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2013/159615
Publication Date 31.10.2013
International Application No. PCT/CN2013/072866
International Filing Date 19.03.2013
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 2933/0033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applicants
  • 厦门市三安光电科技有限公司 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 曾晓强 ZENG, Xiaoqiang
  • 陈顺平 CHEN, Shunping
  • 黄少华 HUANG, Shaohua
  • 潘群峰 PAN, Qunfeng
  • 吴志强 WU, Jyh-Chiarng
Priority Data
201210130389.228.04.2012CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) VERTICAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF ÉLECTROLUMINESCENT VERTICAL ET SON PROCÉDÉ DE FABRICATION
(ZH) 垂直式发光器件及其制作方法
Abstract
(EN)
A vertical high-pressure light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and tube core bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (320). A conductive wire (140) is distributed on a surface of the light emitting device, so that a single LED unit (330) has a vertical structure, and multiple LEDs are connected in series to form a high-pressure LED, thereby solving the problem of low light emitting efficiency and large thermal resistance of a horizontal structure.
(FR)
L'invention concerne un dispositif électroluminescent vertical haute pression et son procédé de fabrication. Les polarités de deux diodes électroluminescentes (DEL) adjacentes sont inversées au moyen d'un dénudage local au laser et d'une liaison de partie centrale de tube, et les deux diodes dont les polarités sont inversées sont disposées sur un substrat isolant comprenant une couche métallique de liaison (320). Un fil conducteur (140) est distribué sur une surface du dispositif électroluminescent, de sorte qu'une seule unité de DEL (330) présente une structure verticale, et de multiples DEL sont connectées en série pour former une DEL haute pression, ce qui permet de résoudre le problème relatif à la faible efficacité d'émission de lumière et à la forte résistance thermique d'une structure horizontale.
(ZH)
一种垂直式高压发光器件及其制作方法。通过区域激光剥离及管芯键合的手段将相邻的两个发光二极管极性翻转,并且该极性翻转的两个二极管置于含有键合金属层(320)的绝缘衬底之上,发光器件表面分布导电连线(140),从而单个LED单元(330)呈垂直结构,多个LED串联形成高压LED,解决了横向结构发光效率低,热阻大的问题。
Also published as
Latest bibliographic data on file with the International Bureau