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1. WO2013159526 - LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2013/159526
Publication Date 31.10.2013
International Application No. PCT/CN2012/085722
International Filing Date 03.12.2012
IPC
H01L 33/10 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
CPC
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0066relating to arrangements for conducting electric current to or from the semiconductor body
H01L 33/0075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0075comprising nitride compounds
H01L 33/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
Applicants
  • 无锡华润华晶微电子有限公司 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. [CN]/[CN]
Inventors
  • 王磊 WANG, Lei
  • 李国琪 LI, Guoqi
  • 余志炎 YU, Zhiyan
  • 浦荣生 PU, Rongsheng
Agents
  • 北京品源专利代理有限公司 BEYOND ATTORNEYS AT LAW
Priority Data
201210127827.X27.04.2012CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF À DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE FABRICATION
(ZH) 发光二极管器件及其制造方法
Abstract
(EN)
A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.
(FR)
L'invention concerne un dispositif à diode électroluminescente et son procédé de fabrication. Le dispositif à diode électroluminescente comprend : un substrat (1) ; une couche épitaxiale au niveau d'un côté du substrat (1) et comprenant une couche de type N (2), une couche de type P (4) et une couche active (3) entre la couche de type N (2) et la couche de type P (4) ; une électrode de type N (5) ; une électrode de type P (7) ; une couche adhésive (8) ; et un substrat gravé (9). Le dispositif à diode électroluminescente comprend en outre une couche isolante (6) entre l'électrode de type N (5) et l'électrode de type P (7), la couche isolante (6) isolant électriquement l'électrode de type N (5) et l'électrode de type P (7). Dans le dispositif à diode électroluminescente et son procédé de fabrication, l'efficacité de l'émission de lumière et l'efficacité lumineuse du dispositif à diode électroluminescente peuvent être améliorées, son câblage est plus facile en comparaison de celui des puces classiques et le processus de fabrication peut être optimisé.
(ZH)
一种发光二极管器件及其制造方法。发光二极管器件包括:衬底(1);在衬底(1)的一侧上的外延层,外延层包括N-型层(2)、P-型层(4)和N-型层(2)和P-型层(4)之间的有源层(3);N-型电极(5);P-型电极(7);粘合层(8)以及图案化的基板(9);其中,发光二极管器件还包括在N-型电极(5)和P-型电极(7)之间的绝缘层(6),绝缘层(6)将N-型电极(5)和P-型电极(7)电性绝缘。发光二极管器件及其制造方法可以提高发光二极管器件的发光效率以及出光效率,且比常规的芯片打线容易,并可以优化制造工艺。
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