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1. WO2013159520 - THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR AND LIQUID CRYSTAL DISPLAY

Publication Number WO/2013/159520
Publication Date 31.10.2013
International Application No. PCT/CN2012/085487
International Filing Date 28.11.2012
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
G02F 1/136 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
G02F 1/133 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
CPC
G02F 1/136222
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136222Colour filters incorporated in the active matrix substrate
H01L 27/1288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1288employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 孔祥春 KONG, Xiangchun
  • 曹占峰 CAO, Zhanfeng
Agents
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Priority Data
201210122560.524.04.2012CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR AND LIQUID CRYSTAL DISPLAY
(FR) SUBSTRAT DE MATRICE DE TRANSISTOR À COUCHE MINCE, SON PROCÉDÉ DE FABRICATION ET AFFICHAGE À CRISTAUX LIQUIDES
(ZH) 薄膜晶体管阵列基板及其制造方法和液晶显示器
Abstract
(EN)
A thin-film transistor (TFT) array substrate, a manufacturing method therefor and a liquid crystal display. The TFT array substrate (201) comprises a substrate (201); a gate electrode (202), a gate line and a shutter bar being formed on the substrate (201); a gate insulating layer (204), a semiconductor active layer (205), a source electrode (206) and a drain electrode (207) which are separated, and a trench structure being formed on the gate electrode (202) in sequence, and the gate insulating layer (204) coming into contact with the semiconductor active layer (205); a passivation layer (209) which is formed above the source electrode (206) and the drain electrode (207); a pixel electrode (210) which is formed above the gate insulating layer (204), the pixel electrode (210) being electrically connected to the drain electrode (207); and at least one primary colour filter layer (211, 212, 213) located above the pixel electrode (210).
(FR)
L'invention concerne un substrat de matrice de transistor à couche mince (TFT), son procédé de fabrication et un affichage à cristaux liquides. Le substrat de matrice de TFT (201) comprend un substrat (201) ; une électrode de grille (202), une ligne de grille et une barre d'obturateur étant formées sur le substrat (201) ; une couche isolante de grille (204), une couche active semi-conductrice (205), une électrode de source (206) et une électrode de drain (207) qui sont séparées, et une structure de tranchée étant formées sur l'électrode de grille (202) dans cet ordre, et la couche isolante de grille (204) entrant en contact avec la couche active semi-conductrice (205) ; une couche de passivation (209) qui est formée au-dessus de l'électrode de source (206) et de l'électrode de drain (207) ; une électrode de pixel (210) qui est formée au-dessus de la couche isolante de grille (204), l'électrode de pixel (210) étant électriquement connectée à l'électrode de drain (207) ; et au moins une couche de filtre de couleurs primaires (211, 212, 213) située au-dessus de l'électrode de pixel (210).
(ZH)
一种薄膜晶体管(TFT)阵列基板及其制造方法和液晶显示器。该TFT阵列基板(201)包括:基板(201);所述基板(201)上形成有栅极(202)、栅线和遮光条;在所述栅极(202)上依次形成有栅绝缘层(204)、半导体有源层(205)、相分离的源极(206)、漏极(207)及沟道结构,所述栅绝缘层(204)与所述半导体有源层(205)相接触;在所述源极(206)和所述漏极(207)上方形成的钝化层(209);在所述栅绝缘层(204)上方形成的像素电极(210),所述像素电极(210)与所述漏极(207)电连接;以及位于所述像素电极(210)上方的至少一种原色滤光层(211、212、213)。
Also published as
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