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1. (WO2013159453) METHOD FOR PREPARING GRAPHENE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/159453 International Application No.: PCT/CN2012/078101
Publication Date: 31.10.2013 International Filing Date: 03.07.2012
IPC:
C01B 31/04 (2006.01) ,C23C 16/26 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31
Carbon; Compounds thereof
02
Preparation of carbon; Purification
04
Graphite
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
26
Deposition of carbon only
Applicants: WANG, Shumin[SE/CN]; CN (UsOnly)
GONG, Qian[CN/CN]; CN (UsOnly)
XIE, Xiaoming[CN/CN]; CN (UsOnly)
WANG, Hailong[CN/CN]; CN (UsOnly)
DI, Zengfeng[CN/CN]; CN (UsOnly)
DING, Guqiao[CN/CN]; CN (UsOnly)
LIU, Qingbo[CN/CN]; CN (UsOnly)
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY,CHINESE ACADEMY OF SCIENCES[CN/CN]; No.865,Changning Road, Changning District Shanghai 200050, CN (AllExceptUS)
Inventors: WANG, Shumin; CN
GONG, Qian; CN
XIE, Xiaoming; CN
WANG, Hailong; CN
DI, Zengfeng; CN
DING, Guqiao; CN
LIU, Qingbo; CN
Agent: J.Z.M.C PATENT AND TRADEMARK LAW OFFICE; YU Mingwei,Room 5022, No.335 GUO Ding Road, YANG Pu district Shanghai 200433, CN
Priority Data:
201210120753.723.04.2012CN
Title (EN) METHOD FOR PREPARING GRAPHENE
(FR) PROCÉDÉ DE PRÉPARATION DE GRAPHÈNE
(ZH) 一种制备石墨烯的方法
Abstract:
(EN) The present invention relates the technical field of inorganic compounds, and particularly, to a method for directly preparing graphene by taking CBr4 as a raw material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the present invention is that the catalyst and a CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and the CBr4 source react on the surface of the substrate to form the graphene, so that the independence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.
(FR) Cette invention concerne le domaine technique des composés inorganiques, et en particulier, un procédé permettant de préparer directement du graphène par utilisation de CBr4 à titre de matière première et de procédés tels que l'épitaxie par faisceau moléculaire (MBE) ou le dépôt chimique en phase vapeur (CVD). Le procédé de préparation de graphène selon l'invention comprend les étapes suivantes : choix d'un matériau approprié à titre de substrat ; dépôt direct d'un catalyseur et de CBr4 sur la surface du substrat ; et mise en œuvre d'un traitement de recuit sur l'échantillon obtenu après dépôt. Comparativement aux autres technologies, le point innovateur du procédé selon l'invention est que le catalyseur et la source de CBr4 peuvent être quantitativement déposés de manière contrôlée sur tout substrat, et que le catalyseur et la source de CBr4 réagissent sur la surface du substrat pour former le graphène, de sorte que l'indépendance de la croissance du graphène sur le matériau de substrat peut être réduite dans une grande mesure, et que des matériaux de substrat différents peuvent être choisis en fonction du contexte des différentes applications.
(ZH) 本发明属于无机化合物技术领域,尤其涉及一种以CBr4为源材料利用分子束外延(MBE)或者化学气相沉淀(CVD)等方法直接制备石墨烯的方法。一种制备石墨烯的方法,包括如下步骤:选取适当的材料作为衬底;在衬底表面直接沉积催化剂和CBr4;对沉积所得的样品进行退火处理。相比于其他技术,本发明方法的创新点是可以定量可控地在任意基底上沉积催化剂和CBr4源,催化剂和CBr4源在基底表面发生反应而形成石墨烯。这样可以极大限度地减弱石墨烯生长对基底材料的依赖性,人们可以根据不同的应用背景选择不同的基底材料。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)