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1. (WO2013157881) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/157881 International Application No.: PCT/KR2013/003330
Publication Date: 24.10.2013 International Filing Date: 19.04.2013
IPC:
H01L 21/205 (2006.01) ,H01L 33/02 (2010.01)
Applicants: SEOUL SEMICONDUCTOR CO., LTD.[KR/KR]; 1B-25, 727, Wonsi-dong, Danwon-gu, Ansan-si, Gyeonggi-do 425-090, KR
Inventors: KAWANISHI, Hideo; KR
Agent: AIP PATENT & LAW FIRM; 30-1, Teheran-ro 14-gil Gangnam-gu Seoul 135-935, KR
Priority Data:
10-2013-004300418.04.2013KR
2012-09609019.04.2012JP
2013-02702614.02.2013JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(KO) 반도체 장치 및 이를 제조하는 방법
Abstract: front page image
(EN) A semiconductor device and a method for manufacturing the same are disclosed. A method for manufacturing a p-type nitride-based semiconductor layer of the semiconductor device comprises forming a AlxGa1-xN semiconductor layer (0 < x ≤ 1) by repeating the steps of: supplying a source of periodic group III for a predetermined time T1, supplying a source of periodic group V that contains a carbon source material for a predetermined time T2 when a predetermined time t1 elapses after starting to supply the source of periodic group III, and supplying the source gas of periodic group III when a predetermined time t2 elapses after starting to supply the source of periodic group V; and supplying the source of periodic group V.
(FR) Cette invention concerne un dispositif à semi-conducteur et son procédé de fabrication. Un procédé de fabrication d'une couche de semi-conducteur à base de nitrure de type p dudit dispositif à semi-conducteur comprend la formation d'une couche de semi-conducteur AlxGa1-xN (0 < x ≤ 1) par répétition des étapes consistant à : distribuer une source du groupe III du tableau périodique pendant un laps de temps T1 prédéterminé; distribuer une source du groupe V du tableau périodique qui contient un matériau source de carbone pendant un laps de temps T2 prédéterminé à l'issue d'un laps de temps prédéterminé t1 après le début de la distribution de la source du groupe III du tableau périodique, et fournir la source de gaz du groupe III du tableau périodique à l'issue d'un laps de temps prédéterminé t2 après le début de la distribution de la source du groupe V du tableau périodique; et distribuer la source du groupe V du tableau périodique V.
(KO) 반도체 장치 및 이를 제조하는 방법이 개시된다. 상기 반도체 장치의 p형 질화물계 반도체층의 제조 방법은, III족 소스를 소정 시간 T1 동안 공급하고, 상기 III족 소스 공급 개시 후, 소정 시간 t1의 경과 후에, 탄소 소스 물질을 함유하는 V족 소스를 소정 시간 T2 동안 공급하고, 상기 V족 소스 공급 개시 후, 소정 시간 t2의 경과 후에, 상기의 III족 소스 가스를 공급하는 단계 및 상기 V족 소스를 공급하는 공정을 반복하여AlxGa1 - xN 반도체층(0 < x ≤ 1)를 형성하는 것을 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)