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1. (WO2013157875) METHOD FOR MANUFACTURING HIGHLY EFFICIENT LIGHT-EMITTING DIODE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/157875 International Application No.: PCT/KR2013/003314
Publication Date: 24.10.2013 International Filing Date: 18.04.2013
IPC:
H01L 33/30 (2010.01) ,H01L 33/32 (2010.01) ,H01L 21/20 (2006.01)
Applicants: SEOUL OPTO DEVICE CO., LTD.[KR/KR]; (Wonsi-dong) 1-36, 65-16, Sandan-ro 163beon-gil Danwon-gu, Ansan-si Gyeonggi-do 425-851, KR
INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY[KR/KR]; (Deokjin-dong 1 Ga) 567, Baekje-daero Deokjin-gu, Jeonju-si Jeollabuk-do 561-756, KR
Inventors: LEE, In-Hwan; KR
JEON, Dae-Woo; KR
CHOI, Joo won; KR
CHO, Han-Su; KR
Agent: LEE, Jun Hyek; 6F., KyeongBin Bldg., Dogok-dong 517-18 Gangnam-gu Seoul 135-854, KR
Priority Data:
10-2012-004020718.04.2012KR
Title (EN) METHOD FOR MANUFACTURING HIGHLY EFFICIENT LIGHT-EMITTING DIODE
(FR) PROCÉDÉ DE FABRICATION DE DIODE ÉLECTROLUMINESCENTE À HAUT RENDEMENT
(KO) 고효율 발광다이오드 제조방법
Abstract: front page image
(EN) A method for manufacturing a light-emitting diode using three-dimensional structures is disclosed. According to one embodiment of the present invention, light extraction efficiency can be enhanced according to a scattering effect by forming three-dimensional structures on a substrate and then forming particles in the spaces between the three-dimensional structures. Additionally, the present invention provides a technical feature wherein the substrate can be reused by easily separating the substrate and the three-dimensional structures.
(FR) La présente invention concerne un procédé de fabrication d'une diode électroluminescente par utilisation de structures tridimensionnelles. Selon un mode de réalisation de la présente invention, le rendement d'extraction de lumière peut être amélioré conformément à un effet de diffusion par formation de structures tridimensionnelles sur un substrat et par formation, par la suite, de particules dans les espaces qui se trouvent entre les structures tridimensionnelles. De plus, la présente invention concerne une caractéristique technique selon laquelle le substrat peut être réutilisé par séparation facile du substrat et des structures tridimensionnelles.
(KO) 본 발명은 3차원 구조물을 이용한 발광 다이오드 제조방법을 개시한다. 본 발명의 일 실시예에 따르면, 기판위에 3차원 구조물을 형성한 후, 3차원 구조물 사이사이에 파티클을 형성함으로써 산란(scattering)효과에 의한 광추출 효율을 향상시킬 수 있다. 또한, 기판과 3차원 구조물을 손쉽게 분리시켜 기판을 재사용할 수 있는 기술적 특징이 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)