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1. (WO2013157842) METHOD FOR FABRICATING NANOPATTERNED SUBSTRATE FOR HIGH-EFFICIENCY NITRIDE-BASED LIGHT-EMITTING DIODE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/157842    International Application No.:    PCT/KR2013/003233
Publication Date: 24.10.2013 International Filing Date: 17.04.2013
IPC:
H01L 33/20 (2010.01), H01L 33/22 (2010.01)
Applicants: HUNETPLUS CO.,LTD [KR/KR]; 177-1, Noseong-myeon Nonsan-si Chungcheongnam-do 320-920 (KR)
Inventors: CHA, Hyuk-Jin; (KR).
LEE, Heon; (KR).
CHOI, Eunseo; (KR)
Agent: SHIN, Sung-Ki; (Sadang-dong, 4th Floor, SN Bldg) 47, Dongjak-daero 25-gil Dongjak-gu, Seoul 156-816 (KR)
Priority Data:
10-2012-0040785 19.04.2012 KR
Title (EN) METHOD FOR FABRICATING NANOPATTERNED SUBSTRATE FOR HIGH-EFFICIENCY NITRIDE-BASED LIGHT-EMITTING DIODE
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT À NANOMOTIFS POUR UNE DIODE ÉLECTROLUMINESCENTE À BASE DE NITRURE, À HAUT RENDEMENT
(KO) 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법
Abstract: front page image
(EN)The method for manufacturing a substrate for a light-emitting diode according to the present invention comprises a convex formation step and a crystallization step. Using the substrate for a light-emitting diode according to the present invention can lead to a significant increase in the improvement level of light extraction and the economical formation of a nanopattern.
(FR)Le procédé de fabrication d'un substrat pour une diode électroluminescente selon l'invention comprend une étape de formation convexe et une étape de cristallisation. L'utilisation du substrat pour une diode électroluminescente selon la présente invention peut permettre une augmentation significative du niveau d'amélioration de l'extraction de lumière et la formation économique d'un nanomotif.
(KO)본 발명의 발광다이오드용 기판의 제조방법은 볼록부 형성단계, 그리고 결정화단계를 포함하는 방법을 제공한다. 본 발명의 발광다이오드용 기판을 이용하면 광추출 향상치가 크게 증대될 수 있고, 나노 급 패턴을 경제적으로 형성할 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)