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1. WO2013157715 - METHOD FOR PRODUCING AN OXIDE FILM USING A LOW TEMPERATURE PROCESS, AN OXIDE FILM AND AN ELECTRONIC DEVICE THEREOF

Publication Number WO/2013/157715
Publication Date 24.10.2013
International Application No. PCT/KR2012/010275
International Filing Date 30.11.2012
IPC
H01L 21/208 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
208using liquid deposition
H01L 21/26 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
CPC
H01L 21/02554
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02551Group 12/16 materials
02554Oxides
H01L 21/02565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
H01L 21/02628
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
02623Liquid deposition
02628using solutions
H01L 21/02664
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
H01L 21/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
H01L 29/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
24including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Applicants
  • 전자부품연구원 KOREA ELECTRONICS TECHNOLOGY INSTITUTE [KR]/[KR]
  • 중앙대학교 산학협력단 CHUNG-ANG UNIVERSITY INDUSTRY-ACADEMY COOPERATION FOUNDATION [KR]/[KR]
Inventors
  • 김영훈 KIM, Yong Hoon
  • 박성규 PARK, Sung Kyu
Agents
  • 정태훈 JEONG, Tae Hoon
Priority Data
10-2012-003903516.04.2012KR
10-2012-013753230.11.2012KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR PRODUCING AN OXIDE FILM USING A LOW TEMPERATURE PROCESS, AN OXIDE FILM AND AN ELECTRONIC DEVICE THEREOF
(FR) PROCÉDÉ DE PRODUCTION D'UN FILM D'OXYDE PAR TRAITEMENT À BASSE TEMPÉRATURE, FILM D'OXYDE ET DISPOSITIF ÉLECTRONIQUE
(KO) 저온 공정을 이용한 산화물 박막 제조방법, 산화물 박막 및 그 전자소자
Abstract
(EN)
Disclosed are a method for producing an oxide film using a low temperature process, an oxide film and an electronic device. The method for producing an oxide film according to an embodiment of the present invention includes the steps of coating a substrate with an oxide solution, and irradiating the oxide solution coat with ultraviolet rays under an inert gas atmosphere.
(FR)
Cette invention concerne un procédé de production d'un film d'oxyde par traitement à basse température, un film d'oxyde, et un dispositif électronique. Selon un mode de réalisation de l'invention, ledit procédé de production d'un film d'oxyde comprend les étapes consistant à : enduire un substrat d'une solution d'oxyde ; et irradier la couche de solution d'oxyde de rayons ultraviolets sous atmosphère de gaz inerte.
(KO)
저온 공정을 이용한 산화물 박막 제조방법 및 그 전자소자의 제조방법이 개시된다. 본 발명의 일실시예에 따른 산화물 박막 제조방법은 산화물 용액을 기판 상에 코팅하는 단계와 불활성 가스 분위기 하에서 상기 코팅된 산화물 용액에 자외선 조사하는 단계를 포함한다.
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