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1. (WO2013157650) METHOD FOR PRODUCING SEMICONDUCTOR CERAMIC COMPOSITION

Pub. No.:    WO/2013/157650    International Application No.:    PCT/JP2013/061688
Publication Date: Fri Oct 25 01:59:59 CEST 2013 International Filing Date: Sat Apr 20 01:59:59 CEST 2013
IPC: C04B 35/468
H01C 7/02
Applicants: HITACHI METALS, LTD.
日立金属株式会社
Inventors: SHIMADA Takeshi
島田 武司
UEDA Itaru
上田 到
INO Kentaro
猪野 健太郎
Title: METHOD FOR PRODUCING SEMICONDUCTOR CERAMIC COMPOSITION
Abstract:
Provided is a method for producing a non-lead, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance (α) from becoming small, and obtaining stable properties. A method for producing a non-lead semiconductor ceramic composition in which some of the Ba in a BaTiO3 oxide is substituted with Bi and A (A representing one or more of Na, Li, and K), the method being characterized by: calcinating, at 700°C to 1300°C, inclusive, a starting material for forming the semiconductor ceramic composition; adding an oxide containing Ba and Ti and being a liquid at 1300°C to 1450°C, inclusive, to the calcinated starting material; molding the same; and thereafter, sintering at a temperature of 1300°C to 1450°C, inclusive.