WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2013157649) SEMICONDUCTOR CERAMIC COMPOSITION, METHOD FOR PRODUCING SAME, AND PTC ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/157649 International Application No.: PCT/JP2013/061687
Publication Date: 24.10.2013 International Filing Date: 19.04.2013
IPC:
C04B 35/468 (2006.01) ,H01C 7/02 (2006.01)
Applicants: HITACHI METALS, LTD.[JP/JP]; 2-1, Shibaura 1-chome, Minato-ku, Tokyo 1058614, JP
Inventors: SHIMADA Takeshi; JP
UEDA Itaru; JP
INO Kentaro; JP
Agent: SHIN-EI PATENT FIRM, P.C.; Toranomon East Bldg. 8F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003, JP
Priority Data:
2012-09654620.04.2012JP
2012-11812024.05.2012JP
2012-27971121.12.2012JP
Title (EN) SEMICONDUCTOR CERAMIC COMPOSITION, METHOD FOR PRODUCING SAME, AND PTC ELEMENT
(FR) COMPOSITION DE CÉRAMIQUE SEMI-CONDUCTRICE, SON PROCÉDÉ DE FABRICATION ET UN ÉLÉMENT À COEFFICIENT POSITIF DE TEMPÉRATURE (PTC)
(JA) 半導体磁器組成物、その製造方法、およびPTC素子
Abstract: front page image
(EN) Provided is a lead-free semiconductor ceramic composition in which some of the Ba in a BaTiO3 oxide is substituted with Bi and A (A representing one or more of Na, Li, and K), the semiconductor ceramic composition having a region positioned between the outer-shell section and the center section of the grain, and having a higher concentration of Bi than the outer-shell section and the center section, when the concentration of Bi is measured in the radial direction within a crystal grain.
(FR) L'invention concerne une composition de céramique semi-conductrice exempte de plomb dans laquelle une partie du Ba dans un oxyde BaTiO3 est substitué par Bi et A (A représentant un ou plusieurs parmi Na, Li et K), la composition de céramique semi-conductrice ayant une région positionnée entre la section d'enveloppe externe et la section centrale du grain, et ayant une concentration plus élevée de Bi que la section d'enveloppe externe et la section centrale, lorsque la concentration de Bi est mesurée dans la direction radiale à l'intérieur d'un grain cristallin.
(JA)  BaTiO3系酸化物におけるBaの一部をBiおよびA(AはNa,Li,Kのうち少なくとも一種)で置換した非鉛の半導体磁器組成物であって、結晶粒内の径方向にBiの濃度を測定したとき、粒内の中心部分と外郭部分との間に中心部分と外郭部分のそれぞれよりもBi濃度が高い領域を有する、半導体磁器組成物が提供される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)