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1. (WO2013157505) ELECTRET STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND ELECTROSTATIC INDUCTION-TYPE CONVERSION ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/157505 International Application No.: PCT/JP2013/061130
Publication Date: 24.10.2013 International Filing Date: 12.04.2013
IPC:
H01G 7/02 (2006.01) ,H04R 19/01 (2006.01) ,H04R 19/04 (2006.01) ,H04R 31/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
7
Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
02
Electrets, i.e. having a permanently-polarised dielectric
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19
Electrostatic transducers
01
characterised by the use of electrets
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19
Electrostatic transducers
04
Microphones
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31
Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Applicants:
国立大学法人 埼玉大学 NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY [JP/JP]; 埼玉県さいたま市桜区下大久保255 255, Shimo-ookubo, Sakura-ku, Saitama-shi Saitama 3388570, JP
Inventors:
蔭山 健介 KAGEYAMA Kensuke; JP
Agent:
鈴木壯兵衞 SUZUKI Sohbe; 東京都港区虎ノ門1丁目2番8号虎ノ門琴平タワー23F 三好内外国特許事務所内 c/o Miyoshi International Patent Office, 23F, Toranomon Kotohira Tower, 2-8, Toranomon 1-chome, Minatoku, Tokyo 1050001, JP
Priority Data:
2012-09390017.04.2012JP
Title (EN) ELECTRET STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND ELECTROSTATIC INDUCTION-TYPE CONVERSION ELEMENT
(FR) STRUCTURE À ÉLECTRET ET SON PROCÉDÉ DE FABRICATION ET ÉLÉMENT DE CONVERSION DU TYPE À INDUCTION ÉLECTROSTATIQUE
(JA) エレクトレット構体及びその製造方法並びに静電誘導型変換素子
Abstract:
(EN) Provided is an electret structure (1) having: a fluorine resin film (21); a back electrode (22) formed on one surface of the fluorine resin film (21); and a silica layer (20) formed on the other surface of the fluorine resin film (21); the silica layer (20) comprising a plurality of insular silica regions (201) covering the fluorine resin film (21) in a mutually isolated state, a negative charge being attached to the insular silica regions (201). An electrostatic induction-type conversion element in which the electret structure (1) is used can be mounted on a substrate by reflow using a Pb-free solder.
(FR) Cette invention concerne une structure à électret (1) comprenant : un film de résine fluorée (21) ; une électrode arrière (22) formée sur une surface du film de résine fluorée (21) ; et une couche de silice (20) formée sur l'autre surface du film de résine fluorée (21). Ladite couche de silice (20) comprend une pluralité de régions formant îlots de silice (201) qui recouvrent le film de résine fluorée (21) dans un état mutuellement isolé, une charge négative étant reliée aux régions formant îlots de silice (201).L'invention concerne en outre un élément de conversion du type à induction électrostatique mettant en œuvre ladite structure à électret (1) et conçu pour être soudé par refusion sur un substrat au moyen d'une soudure sans plomb.
(JA) フッ素樹脂フィルム21と、フッ素樹脂フィルム21の一方の面に形成された背面電極22と、フッ素樹脂フィルム21の他方の面に形成されたシリカ層20と、を有し、シリカ層20が、互いに孤立した状態でフッ素樹脂フィルム21を被覆する複数の島状シリカ領域201からなり、この島状シリカ領域201に負電荷が付着されているエレクトレット構体1を提供する。このエレクトレット構体1を用いた静電誘導型変換素子はPbフリー半田を用いたリフローで基板に実装できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)