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1. (WO2013157465) POLISHING COMPOSITION TO BE USED TO POLISH SEMICONDUCTOR SUBSTRATE HAVING SILICON THROUGH ELECTRODE STRUCTURE, AND POLISHING METHOD USING POLISHING COMPOSITION
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/157465 International Application No.: PCT/JP2013/060854
Publication Date: 24.10.2013 International Filing Date: 10.04.2013
IPC:
H01L 21/304 (2006.01) ,B24B 37/00 (2012.01) ,C09K 3/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
Applicants: FUJIMI INCORPORATED[JP/JP]; 1-1, Chiryo 2-chome, Nishibiwajima-cho, Kiyosu-shi, Aichi 4528502, JP
Inventors: SHINODA Toshio; JP
Agent: KAWAGUCHI, Yoshiyuki; Acropolis 21 Building 6th floor, 4-10, Higashi Nihonbashi 3-chome, Chuo-ku, Tokyo 1030004, JP
Priority Data:
2012-09389517.04.2012JP
Title (EN) POLISHING COMPOSITION TO BE USED TO POLISH SEMICONDUCTOR SUBSTRATE HAVING SILICON THROUGH ELECTRODE STRUCTURE, AND POLISHING METHOD USING POLISHING COMPOSITION
(FR) COMPOSITION DE POLISSAGE DESTINÉE À ÊTRE UTILISÉE POUR POLIR UN SUBSTRAT SEMI-CONDUCTEUR AYANT UNE STRUCTURE D'ÉLECTRODE À TRAVERS LE SILICIUM, ET PROCÉDÉ DE POLISSAGE UTILISANT LA COMPOSITION DE POLISSAGE
(JA) シリコン貫通電極構造を有する半導体基板の研磨に使用する研磨用組成物及びその研磨用組成物を用いる研磨方法
Abstract:
(EN) This polishing composition contains an oxidizing agent having a reference electrode potential of 350-740 mV, a polishing accelerator for silicon, a polishing speed increasing agent for a silicon through electrode material, a contamination preventing agent for silicon, and water.
(FR) L'invention concerne une composition de polissage qui contient un agent oxydant ayant un potentiel d'électrode de référence de 350 à 740 mV, un accélérateur de polissage pour silicium, un agent d'augmentation de vitesse de polissage pour un matériau d'électrode à travers le silicium, un agent de prévention de contamination pour silicium, et de l'eau.
(JA) 本発明の研磨用組成物は、標準電極電位が350mV以上740mV以下の酸化剤、シリコンの研磨促進剤、シリコン貫通電極材料の研磨速度増加剤、シリコンの汚染防止剤及び水を含有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)