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1. WO2013157206 - SEMICONDUCTOR INTEGRATED CIRCUIT

Publication Number WO/2013/157206
Publication Date 24.10.2013
International Application No. PCT/JP2013/002240
International Filing Date 01.04.2013
IPC
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 27/088 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H03B 5/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
5Generation of oscillations using amplifier with regenerative feedback from output to input
02Details
CPC
H01L 21/823892
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823892with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
H01L 27/0928
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
0928comprising both N- and P- wells in the substrate, e.g. twin-tub
Applicants
  • 株式会社デンソー DENSO CORPORATION [JP]/[JP]
Inventors
  • 石川 靖之 ISHIKAWA, Yasuyuki
Agents
  • 金 順姫 KIN, Junhi
Priority Data
2012-09404317.04.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR INTEGRATED CIRCUIT
(FR) CIRCUIT INTÉGRÉ À SEMI-CONDUCTEUR
(JA) 半導体集積回路
Abstract
(EN)
In this semiconductor integrated circuit, a clock generating circuit (50) and an internal circuit (30) comprising a transistor (11) are formed on a semiconductor substrate (10) of a first conductivity type. The clock generating circuit (50) has a ring oscillator (51). The transistor (11) has a first well (13) of a first conductivity type, and, formed in the first well (13), second wells (14, 15) of a second conductivity type and a third well (16) of the first conductivity type. A first interconnect (93) connected to the second well (16), and a second interconnect (94) connected to the third well (16), in the transistor (11) constituting the clock generating circuit (50) are respectively connected independently to ground members (92, 98).
(FR)
Dans le circuit intégré à semi-conducteur faisant l'objet de l'invention, un circuit de génération d'horloge (50) ainsi qu'un circuit interne (30) comprenant un transistor (11) se trouvent sur un substrat semi-conducteur (10) d'un premier type de conductivité. Le circuit de génération d'horloge (50) comporte un oscillateur en anneau (51). Le transistor (11) présente un premier puits (13) d'un premier type de conductivité, et, dans ce premier puits (13), des deuxièmes puits (14, 15) d'un second type de conductivité et un troisième puits (16) du premier type de conductivité. Dans le transistor (11) qui constitue le circuit de génération d'horloge (50), une première interconnexion (93) connectée au deuxième puits (16) et une seconde interconnexion (94) connectée au troisième puits (16) sont connectées respectivement de manière indépendante à des éléments de terre (92, 98).
(JA)
 半導体集積回路において、トランジスタ(11)から成る内部回路(30)及びクロック生成回路(50)が第1導電型の半導体基板(10)に形成されている。前記クロック生成回路(50)は、リングオシレータ(51)を有する。前記トランジスタ(11)は、第1導電型の第1ウェル(13)と、前記第1ウェル(13)に形成された第2導電型の第2ウェル(14,15)及び第1導電型の第3ウェル(16)と、を有する。クロック生成回路(50)を構成する前記トランジスタ(11)の前記第2ウェル(15)に接続された第1配線(93)と、前記第3ウェル(16)に接続された第2配線(94)とがそれぞれ独立してグランド部材(92,98)に接続されている。
Also published as
Latest bibliographic data on file with the International Bureau