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1. (WO2013156107) COATING CONTAINING SI-DLC, DLC, AND ME-DLC, AND A METHOD FOR PRODUCING COATINGS

Pub. No.:    WO/2013/156107    International Application No.:    PCT/EP2013/000956
Publication Date: Fri Oct 25 01:59:59 CEST 2013 International Filing Date: Fri Mar 29 00:59:59 CET 2013
IPC: C23C 14/06
C23C 14/34
C23C 28/04
C23C 28/00
Applicants: AMG COATING TECHNOLOGIES GMBH
Inventors: HOFMANN, Dieter
Title: COATING CONTAINING SI-DLC, DLC, AND ME-DLC, AND A METHOD FOR PRODUCING COATINGS
Abstract:
The invention relates to a workpiece which comprises a main part, one or more intermediate layers if required, and a cover layer which contains Si-DLC, DLC, one or more types of Me-DLC, and 2.5 to 20 atm.% of hydrogen, Me being selected from the group comprising Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, Ni and W; the cover layer having a hardness of 15 to 50 GPa; the cover layer consisting of partial volumes of a size between 40 x 40 x 40 nm3 and 200 x 200 x 200 nm3, and each partial volume having an average Si-content of 2.5 to 30 atm.% and an average Me-content of between 2.5 and 30 atm.%. A method for PVD-coating workpieces comprises one or more steps S1 to SN, where N = 1, 2 or 3, in which in step SN, a cover layer containing Si-DLC, DLC, Me-DLC and hydrogen, where Me is selected from the group comprising Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, Ni and W, is deposited using one or more simultaneously-operated magnetron cathodes with the same or differing targets, with one or more targets containing 20 to 100 atm.% of silicon, one or more targets containing 20 to 100 atm.% of carbon, and one or more targets containing 20 to 100 atm.% of Me, and the deposition being carried out in an atmosphere that has a nominal hydrogen content of less than 30 atm.%.