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1. (WO2013155818) METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

Pub. No.:    WO/2013/155818    International Application No.:    PCT/CN2012/081785
Publication Date: Fri Oct 25 01:59:59 CEST 2013 International Filing Date: Sat Sep 22 01:59:59 CEST 2012
IPC: H01L 21/322
Applicants: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
中国科学院微电子研究所
BI, Jinshun
毕津顺
LUO, Jiajun
罗家俊
HAN, Zhengsheng
韩郑生
Inventors: BI, Jinshun
毕津顺
LUO, Jiajun
罗家俊
HAN, Zhengsheng
韩郑生
Title: METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Abstract:
A method for manufacturing a semiconductor structure is provided. The method is characterized by comprising the following steps of: providing a SOI substrate for forming the semiconductor structure, the SOI substrate comprises a monocrystalline silicon top layer, an oxide buried layer and a support substrate; and forming an amorphous region in an area outside the area for forming a channel region of the semiconductor structure in the monocrystalline silicon top layer. The method provided by the present invention can effectively improve the reliability of a gate dielectric layer formed on the SOI substrate.