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1. (WO2013155432) PLASMA ENHANCED ATOMIC LAYER DEPOSITION METHOD

Pub. No.:    WO/2013/155432    International Application No.:    PCT/US2013/036398
Publication Date: Fri Oct 18 01:59:59 CEST 2013 International Filing Date: Sat Apr 13 01:59:59 CEST 2013
IPC: C23C 16/18
C23C 16/34
C23C 16/06
C23C 16/455
Applicants: VEECO INSTRUMENTS, INC.
Inventors: SAMAL, Nigamananda
Title: PLASMA ENHANCED ATOMIC LAYER DEPOSITION METHOD
Abstract:
A cyclic PE-ALD process (Fig. 3) includes four steps in two phases; in a first phase (TDMAT), a TDMAT pulse (e.g. 1 sec) is performed followed by a purge (e.g. 1.5 sec), and in a second phase (H2/Plasma), an H2 pulse (e.g. 2.5 sec) and RF power for a plasma pulse (e.g. 1 sec) are concurrently performed, followed by a purge. Cycles of this process build layers of TiN on the substrate that are highly conformal and not subject to H2 inclusions to nearly the same extent as prior art processes. The film quality is further improved by the application of RF power for plasma from beneath the substrate.