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1. (WO2013155396) METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH CHANNEL CONDUCTIVITY AND HIGH BREAKDOWN VOLTAGE NITROGEN POLAR HIGH ELECTRON MOBILITY TRANSISTORS

Pub. No.:    WO/2013/155396    International Application No.:    PCT/US2013/036342
Publication Date: Fri Oct 18 01:59:59 CEST 2013 International Filing Date: Sat Apr 13 01:59:59 CEST 2013
IPC: H01L 29/66
H01L 21/338
H01L 21/8222
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
LU, Jing
KELLER, Stacia
MISHRA, Umesh K.
Inventors: LU, Jing
KELLER, Stacia
MISHRA, Umesh K.
Title: METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH CHANNEL CONDUCTIVITY AND HIGH BREAKDOWN VOLTAGE NITROGEN POLAR HIGH ELECTRON MOBILITY TRANSISTORS
Abstract:
A method for growing high mobility, high charge Nitrogen polar (N-polar) or Nitrogen face (In, Al, Ga)N/GaN High Electron Mobility Transistors (HEMTs). The method can provide a successful approach to increase the breakdown voltage and reduce the gate leakage of the N-polar HEMTs, which has great potential to improve the N-polar or N-face HEMTs' high frequency and high power performance.