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1. WO2013155326 - APPARATUSES AND METHODS FOR PROVIDING SET AND RESET VOLTAGES AT THE SAME TIME

Publication Number WO/2013/155326
Publication Date 17.10.2013
International Application No. PCT/US2013/036209
International Filing Date 11.04.2013
IPC
G11C 13/00 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
G11C 5/14 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
5Details of stores covered by group G11C11/63
14Power supply arrangements
G11C 7/20 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
20Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
CPC
G11C 13/0007
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0007comprising metal oxide memory material, e.g. perovskites
G11C 13/0026
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0023Address circuits or decoders
0026Bit-line or column circuits
G11C 13/0028
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0023Address circuits or decoders
0028Word-line or row circuits
G11C 13/0038
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0038Power supply circuits
G11C 13/004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
004Reading or sensing circuits or methods
G11C 13/0061
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0061Timing circuits or methods
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • TIBURZI, Marco-Domenico
  • MAROTTA, Giulio-Giuseppe
Agents
  • MADDEN, Robert B.
Priority Data
13/445,57712.04.2012US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) APPARATUSES AND METHODS FOR PROVIDING SET AND RESET VOLTAGES AT THE SAME TIME
(FR) DISPOSITIFS ET PROCÉDÉS PERMETTANT DE FOURNIR SIMULTANÉMENT DES TENSIONS D'INITIALISATION ET DE RÉINITIALISATION
Abstract
(EN) Apparatuses and methods are described, such as those involving driver circuits that are configured to provide reset and set voltages to different variable state material memory cells in an array at the same time. Additional apparatuses, and methods are described.
(FR) L'invention concerne des dispositifs et des procédés, tels que ceux impliquant des circuits pilotes qui sont configurés pour fournir simultanément des tensions de réinitialisation et d'initialisation à différentes cellules de mémoire de matériau à état variable dans une matrice. L'invention concerne également des dispositifs et des procédés supplémentaires.
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