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1. (WO2013155116) FIELD EFFECT TRANSISTOR, DEVICE INCLUDING THE TRANSISTOR, AND METHODS OF FORMING AND USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/155116 International Application No.: PCT/US2013/035852
Publication Date: 17.10.2013 International Filing Date: 09.04.2013
IPC:
G01N 27/414 (2006.01) ,G01N 33/487 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27
Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26
by investigating electrochemical variables; by using electrolysis or electrophoresis
403
Cells and electrode assemblies
414
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
33
Investigating or analysing materials by specific methods not covered by groups G01N1/-G01N31/131
48
Biological material, e.g. blood, urine; Haemocytometers
483
Physical analysis of biological material
487
of liquid biological material
Applicants:
TAKULAPALLI, Bharath [IN/US]; US
INANOBIO LLC [US/US]; 1605 West University Drive, Suite 107 Tempe, Arizona 85281, US
Inventors:
TAKULAPALLI, Bharath; US
ABHINAV, Jain; US
Agent:
PILLOTE, Cynthia; Snell & Wilmer LLP One Arizona Center 400 East Van Buren Street Phoenix, AZ 85004-2202, US
Priority Data:
61/621,96609.04.2012US
61/802,23515.03.2013US
Title (EN) FIELD EFFECT TRANSISTOR, DEVICE INCLUDING THE TRANSISTOR, AND METHODS OF FORMING AND USING SAME
(FR) TRANSISTOR À EFFET DE CHAMP, DISPOSITIF DOTÉ DU TRANSISTOR ET PROCÉDÉ POUR LE FORMER ET L'UTILISER
Abstract:
(EN) The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like.
(FR) La présente invention concerne un transistor à effet de champ amélioré et un dispositif pouvant être utilisé pour détecter et caractériser divers matériaux. Le transistor à effet de champ et/ou le dispositif doté du transistor peuvent être utilisés dans diverses applications, notamment le séquençage d'un génome, le séquençage des protéines, le séquençage biomoléculaire et la détection d'ions, de molécules, de produits chimiques, de biomolécules, d'atomes de métaux, de polymères, de nanoparticules et de substances de même type.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)