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1. (WO2013154485) A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BASED ON EPITAXIAL GROWTH.
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/154485    International Application No.:    PCT/SE2013/050355
Publication Date: 17.10.2013 International Filing Date: 28.03.2013
IPC:
H01L 21/205 (2006.01)
Applicants: TANDEM SUN AB [SE/SE]; Lillhersbyvägen 10A SE-191 45 Sollentuna (SE)
Inventors: SUN, Yanting; (SE).
LOURDUDOSS, Sebastian; (SE)
Agent: KRANSELL & WENNBORG KB; P.O. Box 27834 S-115 93 Stockholm (SE)
Priority Data:
61/624,110 13.04.2012 US
Title (EN) A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BASED ON EPITAXIAL GROWTH.
(FR) FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR
Abstract: front page image
(EN)A method for manufacturing a semiconductor device and a semiconductor manufactured thereby, comprising growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate (50) that can be used as light emitting and photovoltaic devices.
(FR)L'invention concerne un procédé de fabrication d'un dispositif à semi-conducteur et un semi-conducteur ainsi fabriqué, comprenant la croissance d'une hétérojonction abrupte comprenant un cristal semi-conducteur présentant très peu de défauts de cristal sur un substrat dissemblable (50) qui peut être utilisé comme dispositif électroluminescent et photovoltaïque.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)