Search International and National Patent Collections

1. (WO2013154485) A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BASED ON EPITAXIAL GROWTH.

Pub. No.:    WO/2013/154485    International Application No.:    PCT/SE2013/050355
Publication Date: Fri Oct 18 01:59:59 CEST 2013 International Filing Date: Fri Mar 29 00:59:59 CET 2013
IPC: H01L 21/205
Applicants: TANDEM SUN AB
Inventors: SUN, Yanting
LOURDUDOSS, Sebastian
Title: A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BASED ON EPITAXIAL GROWTH.
Abstract:
A method for manufacturing a semiconductor device and a semiconductor manufactured thereby, comprising growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate (50) that can be used as light emitting and photovoltaic devices.