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1. (WO2013153999) SEMICONDUCTOR LASER DEVICE ASSEMBLY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/153999 International Application No.: PCT/JP2013/060163
Publication Date: 17.10.2013 International Filing Date: 03.04.2013
IPC:
H01S 5/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
14
External cavity lasers
Applicants:
ソニー株式会社 SONY CORPORATION [JP/JP]; 東京都港区港南1丁目7番1号 1-7-1, Konan, Minato-ku, Tokyo 1080075, JP
Inventors:
渡邊 秀輝 WATANABE Hideki; JP
河野 俊介 KONO Shunsuke; JP
倉本 大 KURAMOTO Masaru; JP
Agent:
山本 孝久 YAMAMOTO Takahisa; 東京都品川区大崎4丁目3番2号 秋葉ビル301号 Room 301, Akiba Building, 3-2, Ohsaki 4-chome, Shinagawa-ku, Tokyo 1410032, JP
Priority Data:
2012-08862709.04.2012JP
Title (EN) SEMICONDUCTOR LASER DEVICE ASSEMBLY
(FR) ENSEMBLE DE DISPOSITIF LASER À SEMI-CONDUCTEUR
(JA) 半導体レーザ装置組立体
Abstract:
(EN) This semiconductor laser device assembly is provided with: (A) a semiconductor laser element (10); and (B) a diffraction grating (101) which constitutes an external resonator, which returns, to the semiconductor laser element (10), diffraction light other than 0-order diffraction light, and which outputs the 0-order diffraction light to the exterior thereof. The direction in which the diffractive surface of the diffraction grating (101) extends is substantially parallel to the main oscillation direction, in the electric field, of laser light incident on the diffraction grating (101).
(FR) Cette invention concerne un ensemble de dispositif laser à semi-conducteur, comprenant : (A) un élément laser à semi-conducteur (10) ; et (B) un réseau de diffraction (101) qui configure un résonateur externe, qui renvoie vers l'élément laser à semi-conducteur (10) la lumière de diffraction autre que la lumière de diffraction d'ordre 0, et qui émet la lumière de diffraction d'ordre 0 vers l'extérieur. La direction dans laquelle s'étend la surface de diffraction du réseau de diffraction (101) est sensiblement parallèle à la direction d'oscillation principale, dans le champ électrique, de la lumière laser incidente sur le réseau de diffraction (101).
(JA) 半導体レーザ装置組立体は、(A)半導体レーザ素子10、及び、(B)外部共振器を構成し、0次以外の回折光を半導体レーザ素子10に戻し、0次回折光を外部に出力する回折格子101を備えており、回折格子101の回折面の延びる方向と、回折格子101に入射するレーザ光の電界の主たる振動方向とは概ね平行である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)