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Machine translation
1. (WO2013153999) SEMICONDUCTOR LASER DEVICE ASSEMBLY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/153999    International Application No.:    PCT/JP2013/060163
Publication Date: 17.10.2013 International Filing Date: 03.04.2013
IPC:
H01S 5/14 (2006.01)
Applicants: SONY CORPORATION [JP/JP]; 1-7-1, Konan, Minato-ku, Tokyo 1080075 (JP)
Inventors: WATANABE Hideki; (JP).
KONO Shunsuke; (JP).
KURAMOTO Masaru; (JP)
Agent: YAMAMOTO Takahisa; Room 301, Akiba Building, 3-2, Ohsaki 4-chome, Shinagawa-ku, Tokyo 1410032 (JP)
Priority Data:
2012-088627 09.04.2012 JP
Title (EN) SEMICONDUCTOR LASER DEVICE ASSEMBLY
(FR) ENSEMBLE DE DISPOSITIF LASER À SEMI-CONDUCTEUR
(JA) 半導体レーザ装置組立体
Abstract: front page image
(EN)This semiconductor laser device assembly is provided with: (A) a semiconductor laser element (10); and (B) a diffraction grating (101) which constitutes an external resonator, which returns, to the semiconductor laser element (10), diffraction light other than 0-order diffraction light, and which outputs the 0-order diffraction light to the exterior thereof. The direction in which the diffractive surface of the diffraction grating (101) extends is substantially parallel to the main oscillation direction, in the electric field, of laser light incident on the diffraction grating (101).
(FR)Cette invention concerne un ensemble de dispositif laser à semi-conducteur, comprenant : (A) un élément laser à semi-conducteur (10) ; et (B) un réseau de diffraction (101) qui configure un résonateur externe, qui renvoie vers l'élément laser à semi-conducteur (10) la lumière de diffraction autre que la lumière de diffraction d'ordre 0, et qui émet la lumière de diffraction d'ordre 0 vers l'extérieur. La direction dans laquelle s'étend la surface de diffraction du réseau de diffraction (101) est sensiblement parallèle à la direction d'oscillation principale, dans le champ électrique, de la lumière laser incidente sur le réseau de diffraction (101).
(JA)半導体レーザ装置組立体は、(A)半導体レーザ素子10、及び、(B)外部共振器を構成し、0次以外の回折光を半導体レーザ素子10に戻し、0次回折光を外部に出力する回折格子101を備えており、回折格子101の回折面の延びる方向と、回折格子101に入射するレーザ光の電界の主たる振動方向とは概ね平行である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)