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1. WO2013153950 - COATING DISPERSANT COMPOSITION, METHOD FOR PRODUCING COATING DISPERSANT COMPOSITION, SOLAR CELL, AND METHOD FOR MANUFACTURING SOLAR CELL

Publication Number WO/2013/153950
Publication Date 17.10.2013
International Application No. PCT/JP2013/058908
International Filing Date 27.03.2013
IPC
H01L 21/38 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
38Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions
H01L 21/225 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H01L 31/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
CPC
H01L 21/2225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
2225Diffusion sources
H01L 21/2254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
225using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
2251Diffusion into or out of group IV semiconductors
2254from or through or into an applied layer, e.g. photoresist, nitrides
H01L 21/2255
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
225using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
2251Diffusion into or out of group IV semiconductors
2254from or through or into an applied layer, e.g. photoresist, nitrides
2255the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
H01L 31/02168
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
02168the coatings being antireflective or having enhancing optical properties for the solar cells
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/0682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0682back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
Applicants
  • ナガセケムテックス株式会社 NAGASE CHEMTEX CORPORATION [JP]/[JP]
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP]
Inventors
  • 大井 陽介 OOI Yosuke
  • 廣庭 大輔 HIRONIWA Daisuke
  • 橋本 敬宏 HASHIMOTO Takahiro
  • 圓山 洋介 MARUYAMA Yosuke
Agents
  • 特許業務法人 安富国際特許事務所 YASUTOMI & ASSOCIATES
Priority Data
2012-09180013.04.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COATING DISPERSANT COMPOSITION, METHOD FOR PRODUCING COATING DISPERSANT COMPOSITION, SOLAR CELL, AND METHOD FOR MANUFACTURING SOLAR CELL
(FR) COMPOSITION DE DISPERSANT DE REVÊTEMENT, PROCÉDÉ DE FABRICATION DE COMPOSITION DE DISPERSANT DE REVÊTEMENT, CELLULE SOLAIRE ET PROCÉDÉ DE FABRICATION DE CELLULE SOLAIRE
(JA) 塗布拡散剤組成物、塗布拡散剤組成物の製造方法、太陽電池及び太陽電池の製造方法
Abstract
(EN)
An aim of the present invention is to provide a coating dispersant composition in which precipitate formation can be suppressed, drug solution life is longer than a conventional PTG liquid which is free of water, stable long-term storage is possible even if a PTG liquid is produced in a large amount, and which can be produced at low cost. The coating dispersant composition of the present invention is characterized by comprising a titanate ester, a phosphorous compound, water and an organic solvent.
(FR)
Un objectif de la présente invention est de fournir une composition de dispersant de revêtement dans laquelle la formation de précipité peut être évitée, la durée de vie en solution de médicament est plus longue par rapport à un liquide PTG conventionnel qui ne contient pas d'eau, un stockage stable à long terme est possible même si un liquide PTG est produit en grande quantité et un coût excellent est prévu. La composition de dispersant de revêtement de la présente invention est caractérisée en ce qu'elle comprend du titane, un composé phosphoré, de l'eau et un solvant organique.
(JA)
本発明は、析出物の発生を抑制することができ、従来の水を含まないPTG液に比べ薬液寿命が長く、PTG液を大量に生産しても長期的に安定して保存することが可能となり、コスト的に優れる塗布拡散剤組成物を提供することを目的とする。 本発明の塗布拡散剤組成物は、チタン酸エステル、リン化合物、水及び有機溶剤を含むことを特徴とする。 
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