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1. (WO2013153775) SOLAR CELL AND METHOD FOR GENERATING POWER USING SOLAR CELL

Pub. No.:    WO/2013/153775    International Application No.:    PCT/JP2013/002284
Publication Date: Fri Oct 18 01:59:59 CEST 2013 International Filing Date: Wed Apr 03 01:59:59 CEST 2013
IPC: H01L 31/04
H01L 31/052
Applicants: PANASONIC CORPORATION
パナソニック株式会社
Inventors: MATSUSHITA, Akio
松下 明生
ITOH, Akihiro
伊藤 彰宏
NAKAGAWA, Tohru
中川 徹
ISHIDA, Hidetoshi
石田 秀俊
Title: SOLAR CELL AND METHOD FOR GENERATING POWER USING SOLAR CELL
Abstract:
This solar cell configured of a solar cell element (102) and a light collecting lens (101) is characterized in that, when each of the n-type InGaAs layer (104), n-type GaAs layer (106), and n-type InGaP layer (108) of the solar cell element (102) is divided into three portions in a cross-sectional view, and the thickness of a first InGaAs peripheral portion (104b) is represented by d2, the width thereof is represented by w2, the thickness of a second InGaAs peripheral portion (104c) is represented by d3, the width thereof is represented by w3, the thickness of the first GaAs peripheral portion (106b) is represented by d5, the width thereof is represented by w4, the thickness of a second GaAs peripheral portion (104c) is represented by d6, the width thereof is represented by w5, the thickness of a first InGaP peripheral portion (108b) is represented by d8, the width thereof is represented by w6, and the thickness of the second InGaP peripheral portion (108c) is represented by d9, the width thereof is represented by w7, d2 and d3 are 1-4 nm, d5 and d6 are 1-4 nm, d8 and d9 are 1-5 nm, and w2, w3, w4, w5, w6 and w7 are 100 nm or more. The solar cell is also characterized in that, when the width of a first InGaAs center portion (104a) is represented by w1, and the width of a portion (S) is represented by w8, said portion being a window layer (109) portion irradiated with solar light, formula w8≤w1 is satisfied.