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1. WO2013152447 - PULSED SEMICONDUCTOR LASER

Publication Number WO/2013/152447
Publication Date 17.10.2013
International Application No. PCT/CH2013/000058
International Filing Date 10.04.2013
IPC
H01S 3/081 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
08Construction or shape of optical resonators or components thereof
081comprising more than two reflectors
H01S 3/11 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
H01S 5/183 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
H01S 5/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
14External cavity lasers
H01S 3/23 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
23Arrangement of two or more lasers not provided for in groups H01S3/02-H01S3/14113
H01S 5/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
CPC
H01S 3/0811
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
08Construction or shape of optical resonators or components thereof
081comprising more than two reflectors
0811incorporating a dispersive element, e.g. a prism for wavelength selection
H01S 3/0813
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
08Construction or shape of optical resonators or components thereof
081comprising more than two reflectors
0813Configuration of resonator
H01S 3/1118
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11Pulse generation, e.g. Q-switching, mode locking
1106Mode locking
1112Passive mode locking
1115using a saturable absorber
1118Solid state absorber, e.g. SESAM
H01S 3/2325
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
2308Amplifier arrangements, e.g. MOPA
2325Multi-pass amplifiers, e.g. regenerative amplifiers
H01S 5/041
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
041Optical pumping
H01S 5/0601
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
0601comprising an absorbing region
Applicants
  • TIME-BANDWIDTH PRODUCTS AG [CH]/[CH]
Inventors
  • SÜDMEYER, Thomas
  • MAAS, Deran J.H.C.
  • ZAUGG, Christian Anton
  • PALLMANN, Wolfgang Peter
  • HOFFMANN, Martin
  • WEINGARTEN, Kurt
  • KELLER, Ursula
Agents
  • FREI PATENTANWALTSBURÖ AG
Priority Data
61/622,67011.04.2012US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PULSED SEMICONDUCTOR LASER
(FR) LASER SEMI-CONDUCTEUR PULSÉ
Abstract
(EN)
In accordance with an aspect of the invention, a laser for emitting pulsed electromagnetic laser radiation is provided, the laser being a vertical external cavity surface-emitting laser and comprising an optical resonator being defined by a radiation direction arrangement comprising two end reflectors, and the optical resonator defining a laser radiation beam path; the laser further comprising: - an essentially plane semiconductor gain structure having a surface plane for emitting said laser radiation; - pump for exciting said semiconductor gain structure to emit the laser radiation from the surface plane; - a mode locker arranged in the beam path for mode locking the laser radiation; - wherein the radiation direction arrangement is configured to direct the laser radiation on its path from one of the end reflectors to the other one of the end reflectors a plurality of times onto the semiconductor gain structure surface plane to stimulate the emission of the laser radiation from the semiconductor gain structure.
(FR)
Selon un aspect de l'invention, un laser permet d'émettre un rayonnement laser électromagnétique pulsé, le laser étant un laser à émission par la surface et à cavité externe verticale et comprenant un résonateur optique défini par un agencement de direction de rayonnement comprenant deux réflecteurs d'extrémité, et le résonateur optique définissant un trajet de faisceau de rayonnement laser; le laser comprend en outre : une structure de gain semi-conductrice sensiblement plane possédant un plan de surface permettant d'émettre ledit rayonnement laser; une pompe permettant d'exciter ladite structure de gain semi-conductrice pour émettre le rayonnement laser à partir du plan de surface; un système de blocage de modes agencé dans le trajet de faisceau pour réaliser un blocage de modes du rayonnement laser; l'agencement de direction de rayonnement étant conçu pour orienter le rayonnement laser sur son trajet depuis l'un des réflecteurs d'extrémité vers l'autre des réflecteurs d'extrémité plusieurs fois vers le plan de surface de la structure de gain semi-conductrice afin de stimuler l'émission du rayonnement laser à partir de la structure de gain semi-conductrice.
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