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1. WO2013151837 - REDUCTION OF CAPPING LAYER RESISTANCE AREA PRODUCT FOR MAGNETIC DEVICE APPLICATIONS

Publication Number WO/2013/151837
Publication Date 10.10.2013
International Application No. PCT/US2013/034003
International Filing Date 27.03.2013
IPC
G11B 5/39 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads
39using magneto-resistive devices
CPC
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
H01F 10/3286
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3286Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
H01F 10/329
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
329Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
H01F 41/308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
14for applying magnetic films to substrates
30for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
302for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
308lift-off processes, e.g. ion milling, for trimming or patterning
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants
  • HEADWAY TECHNOLOGIES, INC [US]/[US]
  • JAN, Guenole [FR]/[US]
  • TONG, Ru-Ying [US]/[US]
Inventors
  • JAN, Guenole
  • TONG, Ru-Ying
Agents
  • ACKERMAN, Stephen, B.
Priority Data
13/441,15806.04.2012US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) REDUCTION OF CAPPING LAYER RESISTANCE AREA PRODUCT FOR MAGNETIC DEVICE APPLICATIONS
(FR) RÉDUCTION DU PRODUIT RÉSISTANCE-SURFACE DE COUCHE DE COUVERTURE POUR APPLICATIONS À DES DISPOSITIFS MAGNÉTIQUES
Abstract
(EN)
A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.
(FR)
Selon l'invention, une couche ferromagnétique est recouverte d'une couche d'oxyde (ou de nitrure) métallique qui confère à la couche une anisotropie magnétique perpendiculaire au plan. La surface de la couche ferromagnétique est traitée avec un plasma afin d'empêcher une diffusion d'oxygène (ou d'azote) dans l'intérieur de la couche. Une couche d'oxyde métallique illustrative est formée sous la forme d'une couche de magnésium (Mg) métallique qui est traitée par plasma afin de réduire sa taille de grain et d'améliorer la diffusivité d'oxygène dans son intérieur. La couche Mg traitée par plasma est ensuite naturellement oxydée puis, éventuellement, est de nouveau traitée par plasma afin de réduire son épaisseur et d'éliminer la surface supérieure riche en oxygène.
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