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1. WO2013149495 - AMOLED WITH N-TYPE TFT

Publication Number WO/2013/149495
Publication Date 10.10.2013
International Application No. PCT/CN2013/000231
International Filing Date 05.03.2013
IPC
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
CPC
H01L 2227/323
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2227Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
32Devices including an organic light emitting device [OLED], e.g. OLED display
323Multistep processes for AMOLED
H01L 27/3246
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3246Pixel defining structures, e.g. banks
H01L 27/3248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3248Connection of the pixel electrode to the TFT
H01L 27/3258
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3258Insulating layers formed between TFT elements and OLED elements
H01L 51/525
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5237Passivation; Containers; Encapsulation, e.g. against humidity
524Sealing arrangements having a self-supporting structure, e.g. containers
525Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
Applicants
  • AU OPTRONICS CORPORATION [CN]/[CN]
Inventors
  • HSIEH, Hsinghung
Agents
  • LECOME INTELLECTUAL PROPERTY AGENT LTD.
Priority Data
13/438,07103.04.2012US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) AMOLED WITH N-TYPE TFT
(FR) AMOLED À TRANSISTOR EN COUCHES MINCES (TFT) DE TYPE N
Abstract
(EN)
A stratified organic light-emitting diode structure includes a thin-film transistor (40) and an organic light-emitting diode (OLED) (60). The OLED (60) is fabricated on a planarization layer (50) that has a top surface substantially parallel to the substrate, and the layers in the organic light-emitting diode (OLED) (60) are substantially parallel to each other. The major part of each OLED layer has a uniform thickness so that the OLED produces a uniform brightness. The planarization layer (50) covers the thin-film transistor entirely and the planarization layer (50) on top of the thin-film transistor is also covered by an insulation layer (52). In order to electrically connect the top electrode of the OLED (60) to the drain terminal (36) of the thin-film transistor (40), an opening (150) is made through both the top insulating layer (52) and the planarization layer (50) to expose part of the drain terminal (36). Spacers (71, 72) with uniform height are fabricated on the top insulating layer (52) to protect the pixel structure.
(FR)
L'invention concerne une structure stratifiée de diode électroluminescente organique qui comprend un transistor en couches minces (40) et une diode électroluminescente organique (OLED) (60). La diode OLED (60) est fabriquée sur une couche de planarisation (50) qui possède une surface supérieure sensiblement parallèle au substrat et les couches dans la diode électroluminescente organique (OLED) (60) sont sensiblement parallèles entre elles. La majeure partie de chaque couche OLED a une épaisseur uniforme, de telle sorte que la diode OLED produit une luminosité uniforme. La couche de planarisation (50) recouvre intégralement le transistor en couches minces et la couche de planarisation (50) placée au-dessus du transistor en couches minces est également recouverte d'une couche d'isolation (52). Afin de connecter électriquement l'électrode supérieure de la diode OLED (60) à la borne de drain (36) du transistor en couches minces (40), une ouverture est ménagée à la fois à travers la couche d'isolation (52) supérieure et la couche de planarisation (50) pour exposer une partie de la borne de drain (36). Des entretoises (71, 72) de hauteur uniforme sont fabriquées sur la couche d'isolation (52) supérieure afin de protéger la structure de pixel.
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