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1. (WO2013148462) TECHNIQUE FOR PROCESSING A SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/148462    International Application No.:    PCT/US2013/033310
Publication Date: 03.10.2013 International Filing Date: 21.03.2013
IPC:
C23C 14/48 (2006.01), H01J 37/317 (2006.01)
Applicants: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, Massachusetts 01930 (US)
Inventors: KOO, Bon-Woong; (US).
WHITE, Richard M.; (US).
RADOVANOV, Svetlana B.; (US).
DANIELS, Kevin M.; (US).
COBB, Eric R.; (US).
PITMAN, David W.; (US)
Agent: DAISAK, Daniel; Kacvinsky Daisak PLLC 3120 Princeton Pike Suite 303 Lawrenceville, New Jersey 08648 (US)
Priority Data:
61/617,904 30.03.2012 US
13/832,578 15.03.2013 US
Title (EN) TECHNIQUE FOR PROCESSING A SUBSTRATE
(FR) TECHNIQUE DE TRAITEMENT D'UN SUBSTRAT
Abstract: front page image
(EN)Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.
(FR)La présente invention concerne des techniques de traitement d'un substrat. Dans un mode de réalisation ayant valeur d'exemple, la technique peut être mise en œuvre à titre de procédé de traitement d'un substrat. Le procédé comprend les étapes consistant à : ioniser des premier et second matériaux dans une chambre d'une source d'ions, le premier matériau contenant du bore (B) et le second du phosphore (P) ou de l'arsenic (As); générer des premiers ions contenant B et des seconds ions contenant P ou As; puis extraire les premiers et seconds ions de la chambre de source d'ions et les diriger vers le substrat.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)