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1. (WO2013148354) NAND FLASH MEMORY INTERFACE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/148354    International Application No.:    PCT/US2013/032458
Publication Date: 03.10.2013 International Filing Date: 15.03.2013
IPC:
G06F 13/16 (2006.01), G11C 7/10 (2006.01)
Applicants: SANDISK TECHNOLOGIES INC. [US/US]; Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 (US)
Inventors: MOOGAT, Farookh; (US).
RAMACHANDRA, Venkatesh; (US)
Agent: GALLAGHER, Peter A.; Davis Wright Tremaine LLP c/o IP Docketing Dept. 1201 Third Avenue, Suite 2200 Seattle, WA 98101-3045 (US)
Priority Data:
13/435,878 30.03.2012 US
Title (EN) NAND FLASH MEMORY INTERFACE
(FR) INTERFACE DE MÉMOIRE FLASH NON-ET
Abstract: front page image
(EN)A NAND flash memory chip has a configurable interface that can communicate with a NAND flash memory controller using either parallel communication or serial communication. Serial communication requires fewer channels. Control information from the NAND flash memory controller uses a small number of channels. Double Data Rate (DDR) communication provides serial communication with adequate data transfer speed.
(FR)La puce mémoire flash NON-ET selon l'invention a une interface configurable qui peut communiquer avec un contrôleur de mémoire flash NON-ET au moyen d'une communication parallèle ou d'une communication en série. La communication en série requiert moins de canaux. Des informations de commande provenant du contrôleur de mémoire flash NON-ET utilisent un petit nombre de canaux. La communication à double débit binaire (DDR) offre une communication en série à vitesse de transfert de données adéquate.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)