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1. (WO2013148343) OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Pub. No.:    WO/2013/148343    International Application No.:    PCT/US2013/032339
Publication Date: Fri Oct 04 01:59:59 CEST 2013 International Filing Date: Sat Mar 16 00:59:59 CET 2013
IPC: H01L 29/792
Applicants: CYPRESS SEMICONDUCTOR CORPORATION
Inventors: LEVY, Sagy
RAMKUMAR, Krishnaswamy
JENNE, Fredrick
GEHA, Sam
Title: OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
Abstract:
An embodiment of a semiconductor memory device including a multi-layer charge storing layer and methods of forming the same are described. Generally, the device includes a channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide layer overlying the channel; and a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which a stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which a stoichiometric composition of the second oxynitride layer results in it being trap dense. In one embodiment, the device comprises a non-planar transistor including a gate having multiple surfaces abutting the channel, and the gate comprises the tunnel oxide layer and the multi-layer charge storing layer.