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1. WO2013147710 - III-NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURES AND METHODS FOR FABRICATION OF SAME

Publication Number WO/2013/147710
Publication Date 03.10.2013
International Application No. PCT/SG2013/000125
International Filing Date 28.03.2013
Chapter 2 Demand Filed 29.01.2014
IPC
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
CPC
H01L 27/0605
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0605integrated circuits made of compound material, e.g. AIIIBV
H01L 27/0629
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0611integrated circuits having a two-dimensional layout of components without a common active region
0617comprising components of the field-effect type
0629in combination with diodes, or resistors, or capacitors
H01L 29/0646
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0642Isolation within the component, i.e. internal isolation
0646PN junctions
H01L 29/0657
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
H01L 29/1066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1066Gate region of field-effect devices with PN junction gate
H01L 29/2003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
2003Nitride compounds
Applicants
  • AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG]/[SG]
Inventors
  • YUAN, Li
  • LO, Patrick Guo Qiang
  • SUN, Haifeng
  • LEE, Kean Boon
  • WANG, Weizhu
  • SELVARAJ, Susai Lawrence
Agents
  • SPRUSON & FERGUSON (ASIA) PTE LTD
Priority Data
201202296-829.03.2012SG
201202297-629.03.2012SG
201202316-429.03.2012SG
201209463-7 20.12.2012SG
201209553-526.12.2012SG
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) III-NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURES AND METHODS FOR FABRICATION OF SAME
(FR) STRUCTURES DE TRANSISTOR À GRANDE MOBILITÉ D'ÉLECTRONS À BASE DE NITRURE DU GROUPE III ET LEUR PROCÉDÉ DE FABRICATION
Abstract
(EN)
Structures for III-nitride GaN high electron mobility transistors (HEMT), method for fabricating for GaN devices and integrated chip-level power systems using the GaN devices are provided. The GaN HEMT structure includes a substrate, an AlGaN/GaN heterostructure grown on the substrate, and a normally-off GaN device fabricated on the AlGaN/GaN heterostructure. The AlGaN/GaN heterostructure includes a GaN buffer layer and an AlGaN barrier layer. The integrated chip-level power system includes a substrate, an AlGaN/GaN heterostructure layer grown on the substrate and a plurality of GaN devices. The AlGaN/GaN heterostructure layer includes a GaN buffer layer and an AlGaN barrier layer and is formed into mesa areas and valley areas. Each of the plurality of GaN devices are fabricated on a separate one of the mesa areas.
(FR)
La présente invention concerne des structures destinées à des transistors à grande mobilité d'électrons (HEMT) à base de nitrure de gallium (GaN) de groupe III, et un procédé permettant de fabriquer des dispositifs GaN et des systèmes de puissance intégrés au niveau d'une puce utilisant lesdits dispositifs GaN. La structure HEMT GaN selon l'invention comprend un substrat, une hétérostructure AlGaN/GaN que l'on fait croître sur le substrat, et un dispositif GaN normalement bloqué fabriqué sur l'hétérostructure AlGaN/GaN. L'hétérostructure AlGaN/GaN comprend une couche tampon en GaN et une couche barrière en nitrure d'aluminium-gallium (AlGaN). Le système de puissance intégré au niveau d'une puce selon l'invention comprend un substrat, une couche d'hétérostructure AlGaN/GaN que l'on fait croître sur le substrat et une pluralité de dispositifs GaN. La couche d'hétérostructure AlGaN/GaN comprend une couche tampon en GaN et une couche barrière en AlGaN, et est formée dans des zones mésa et des zones vallée. Chaque dispositif parmi la pluralité de dispositifs GaN est fabriqué sur une zone séparée parmi les zones mésa.
Also published as
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