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1. WO2013147315 - METHOD OF FORMING PATTERN, PHOTOMASK AND NANOIMPRINT MOLD MASTER

Publication Number WO/2013/147315
Publication Date 03.10.2013
International Application No. PCT/JP2013/060142
International Filing Date 27.03.2013
IPC
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/32 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
30Imagewise removal using liquid means
32Liquid compositions therefor, e.g. developers
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
C08F 12/24
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
12Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02Monomers containing only one unsaturated aliphatic radical
04containing one ring
14substituted by hetero atoms or groups containing heteroatoms
22Oxygen
24Phenols or alcohols
C08F 212/14
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
212Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02Monomers containing only one unsaturated aliphatic radical
04containing one ring
14substituted by heteroatoms or groups containing heteroatoms
C08F 212/22
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
212Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02Monomers containing only one unsaturated aliphatic radical
04containing one ring
14substituted by heteroatoms or groups containing heteroatoms
22Oxygen
C08F 212/24
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
212Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02Monomers containing only one unsaturated aliphatic radical
04containing one ring
14substituted by heteroatoms or groups containing heteroatoms
22Oxygen
24Phenols or alcohols
C08F 8/02
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Chemical modification by after-treatment
02Alkylation
G03F 7/0002
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Applicants
  • FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • TSUCHIHASHI, Toru
  • USA, Toshihiro
  • SEKI, Tomokazu
  • TAKANO, Ikuo
Agents
  • KURATA, Masatoshi
Priority Data
2012-07508928.03.2012JP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF FORMING PATTERN, PHOTOMASK AND NANOIMPRINT MOLD MASTER
(FR) PROCÉDÉ DE FORMATION DE MOTIF, PHOTOMASQUE ET MOULE MAÎTRE DE NANOIMPRESSION
Abstract
(EN)
Provided is a method of forming a pattern, including forming a film of an actinic-ray- or radiation-sensitive resin composition on a substrate, exposing the film to actinic rays or radiation and developing the exposed film with a developer to thereby obtain a fine pattern, characterized in that the actinic-ray- or radiation-sensitive resin composition comprises a polymeric compound (A) containing any of repeating units of general formula (I) below, and that the developer comprises tetrapropylammonium hydroxide.
(FR)
L'invention concerne un procédé de formation d'un motif, comprenant la formation d'un film d'une composition de résine sensible à un rayon actinique ou à un rayonnement sur un substrat, l'exposition du film à des rayons actiniques ou à un rayonnement et le développement du film exposé par un développeur pour obtenir par là un motif fin, caractérisé en ce que la composition de résine sensible à un rayon actinique ou à un rayonnement comprend un composé polymère (A) contenant n'importe laquelle des unités répétitives de la formule générale (I) ci-après, et en ce que le développeur comprend de l'hydroxyde de tétrapropylammonium.
Also published as
Latest bibliographic data on file with the International Bureau