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1. WO2013147202 - SEMICONDUCTOR LAMINATE AND METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DOPANT COMPOSITION, DOPANT INJECTION LAYER, AND METHOD FOR FORMING DOPED LAYER

Publication Number WO/2013/147202
Publication Date 03.10.2013
International Application No. PCT/JP2013/059629
International Filing Date 29.03.2013
Chapter 2 Demand Filed 18.10.2013
IPC
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/208 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
208using liquid deposition
H01L 21/225 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 31/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
CPC
H01L 21/02436
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/0257
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
H01L 21/02576
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
02573Conductivity type
02576N-type
H01L 21/02579
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
02573Conductivity type
02579P-type
H01L 21/0259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02587Structure
0259Microstructure
Applicants
  • 帝人株式会社 TEIJIN LIMITED [JP]/[JP]
Inventors
  • 今村 哲也 IMAMURA, Tetsuya
  • 富澤 由香 TOMIZAWA, Yuka
  • 池田 吉紀 IKEDA, Yoshinori
Agents
  • 青木 篤 AOKI, Atsushi
Priority Data
2012-07890230.03.2012JP
2012-23220619.10.2012JP
2013-00467015.01.2013JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR LAMINATE AND METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DOPANT COMPOSITION, DOPANT INJECTION LAYER, AND METHOD FOR FORMING DOPED LAYER
(FR) LAMINAT SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION CORRESPONDANT, PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR, DISPOSITIF SEMI-CONDUCTEUR, COMPOSITION DE DOPANT, COUCHE D'INJECTION DE DOPANT, ET PROCÉDÉ DE RÉALISATION DE COUCHE DOPÉE
(JA) 半導体積層体及びその製造方法、半導体デバイスの製造方法、半導体デバイス、ドーパント組成物、ドーパント注入層、並びにドープ層の形成方法
Abstract
(EN)
In the present invention, a first main invention provides a method for manufacturing a semiconductor laminate in which there are few surface irregularities and a silicon layer with high continuity is formed on a base material. The method of the first main invention, for manufacturing a semiconductor laminate comprising a base material (10) and a sintered silicon particle layer (5) on the base material, comprises the following: (a) a step in which a silicon particle dispersion comprising a dispersion medium and silicon particles dispersed in the dispersion medium is applied on the base material (10) to form a silicon particle dispersion layer (1); (b) a step in which the silicon particle dispersion layer (1) is dried to form an unsintered silicon particle layer (2); (c) a step in which a light-transmitting layer (3) is layered onto the unsintered silicon particle layer; and (d) a step in which light is irradiated to the unsintered silicon particle layer (2) through the light-transmitting layer (3) to sinter the silicon particles that make up the unsintered silicon particle layer (2), thus forming the sintered silicon particle layer (5).
(FR)
L'invention concerne, par le premier de ses principaux modes de réalisation, un procédé de fabrication d'un laminat semi-conducteur présentant peu d'irrégularités superficielles et comportant une couche de silicium réalisée avec un niveau élevé de continuité sur un matériau de base. Le procédé du premier des principaux modes de réalisation, qui est plus particulièrement destiné à la fabrication d'un laminat semi-conducteur comprenant, d'une part un matériau de base (10), et d'autre part une couche de particules de silicium frittées (5) appliquée sur le matériau de base, comporte les différentes étapes suivantes : (a) une étape dans laquelle une dispersion de particules de silicium, comprenant un milieu de dispersion et des particules de silicium dispersées dans le milieu de dispersion, est appliquée sur le matériau de base (10) de façon à former une couche de dispersion de particules de silicium (1) ; (b) une étape dans laquelle la couche de dispersion de particules de silicium (1) subit un séchage de façon à former une couche de particules de silicium non frittées (2) ; (c) une étape dans laquelle une couche laissant passer la lumière (3) est appliquée sur la couche de particules de silicium non frittées (2) ; et (d) une étape dans laquelle on soumet la couche de particules de silicium non frittées (2) à un rayonnement lumineux au travers de la couche laissant passer la lumière (3) de façon à fritter les particules de silicium constituant la couche de particules de silicium non frittées (2), réalisant ainsi la couche de particules de silicium frittées (5).
(JA)
 第1の本発明では、表面の凹凸が少なく、連続性の高いシリコン層が基材上に形成された半導体積層体の製造方法を提供する。 基材10及び基材上の焼結シリコン粒子層5を有する半導体積層体を製造する第1の本発明の方法は、(a)分散媒及び分散媒中に分散しているシリコン粒子を含有するシリコン粒子分散体を、基材10上に塗布して、シリコン粒子分散体層1を形成する工程、(b)シリコン粒子分散体層1を乾燥して、未焼結シリコン粒子層2を形成する工程、(c)未焼結シリコン粒子層上に光透過性層3を積層する工程、及び(d)光透過性層3を通して未焼結シリコン粒子層2に光を照射して、未焼結シリコン粒子層2を構成するシリコン粒子を焼結させ、それによって焼結シリコン粒子層5を形成する工程を含む。
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